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BUZ205 반도체 회로 부품 판매점

SIPMOS Power Transistor (N channel Enhancement mode FREDFET)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BUZ205 데이터시트, 핀배열, 회로
SIPMOS® Power Transistor
q N channel
q Enhancement mode
q FREDFET
BUZ 205
Type
BUZ 205
VDS
400 V
ID
6.0 A
RDS (on)
1.0
Package 1)
TO-220 AB
Maximum Ratings
Parameter
Continuous drain current, TC = 35 ˚C
Pulsed drain current, TC = 25 ˚C
Drain-source voltage
Drain-gate voltage, RGS = 20 k
Gate-source voltage
Power dissipation, TC = 25 ˚C
Operating and storage temperature range
Symbol
ID
ID puls
VDS
VDGR
VGS
Ptot
Tj , Tstg
Thermal resistance, chip-case
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Rth JC
Ordering Code
C67078-A1401-A2
Values
6.0
24
400
400
± 20
75
– 55 ... + 150
1.67
E
55/150/56
Unit
A
V
W
˚C
K/W
1) See chapter Package Outlines.
Semiconductor Group
508


BUZ205 데이터시트, 핀배열, 회로
BUZ 205
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Static characteristics
Drain-source breakdown voltage
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage
VGS = VDS , ID = 1 mA
Zero gate voltage drain current
VDS = 400 V, VGS = 0 V
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-source on-resistance
VGS = 10 V, ID = 4.0 A
V(BR) DSS 400
VGS (th)
2.1
IDSS
IGSS
RDS (on)
Dynamic characteristics
Forward transconductance
VDS 2 x ID x RDS(on)max , ID = 4.0 A
gfs
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
Turn-on time ton , (ton = td (on) + tr)
td (on)
VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 tr
Turn-off time toff , (toff = td (off) + tf)
td (off)
VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 tf
1.7
Values
typ. max.
Unit
––V
4.0 4.0
µA
20 250
100 1000
10 100 nA
0.9 1.0
2.9
1500
120
35
30
40
110
50
2000
180
60
45
60
140
65
S
pF
ns
Semiconductor Group
509




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BUZ205 transistor

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