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Siemens Semiconductor Group |
SIPMOS® Power Transistor
q N channel
q Enhancement mode
q FREDFET
BUZ 205
Type
BUZ 205
VDS
400 V
ID
6.0 A
RDS (on)
1.0 Ω
Package 1)
TO-220 AB
Maximum Ratings
Parameter
Continuous drain current, TC = 35 ˚C
Pulsed drain current, TC = 25 ˚C
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Power dissipation, TC = 25 ˚C
Operating and storage temperature range
Symbol
ID
ID puls
VDS
VDGR
VGS
Ptot
Tj , Tstg
Thermal resistance, chip-case
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Rth JC
Ordering Code
C67078-A1401-A2
Values
6.0
24
400
400
± 20
75
– 55 ... + 150
≤ 1.67
E
55/150/56
Unit
A
V
W
˚C
K/W
–
1) See chapter Package Outlines.
Semiconductor Group
508
BUZ 205
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Static characteristics
Drain-source breakdown voltage
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage
VGS = VDS , ID = 1 mA
Zero gate voltage drain current
VDS = 400 V, VGS = 0 V
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-source on-resistance
VGS = 10 V, ID = 4.0 A
V(BR) DSS 400
VGS (th)
2.1
IDSS
IGSS
–
–
–
RDS (on)
–
Dynamic characteristics
Forward transconductance
VDS ≥ 2 x ID x RDS(on)max , ID = 4.0 A
gfs
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
Turn-on time ton , (ton = td (on) + tr)
td (on)
VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 Ω tr
Turn-off time toff , (toff = td (off) + tf)
td (off)
VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 Ω tf
1.7
–
–
–
–
–
–
–
Values
typ. max.
Unit
––V
4.0 4.0
µA
20 250
100 1000
10 100 nA
0.9 1.0 Ω
2.9
1500
120
35
30
40
110
50
–
2000
180
60
45
60
140
65
S
pF
ns
Semiconductor Group
509
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