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Siemens Semiconductor Group |
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ111S
VDS
55 V
ID
80 A
BUZ111S
SPP80N05
Pin 1
G
Pin 2
D
Pin 3
S
RDS(on)
0.008 Ω
Package
TO-220 AB
Ordering Code
Q67040-S4003-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25 Ω
L = 220 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
80
320
700
80
25
6
± 20
250
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
28/Jan/1998
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Thermal resistance, junction - case
Thermal resistance, junction - ambient
IEC climatic category, DIN IEC 68-1
BUZ111S
SPP80N05
Symbol
Tj
Tstg
RthJC
RthJA
Values
-55 ... + 175
-55 ... + 175
≤ 0.6
≤ 62
55 / 175 / 56
Unit
°C
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 240 µA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 80 A
V(BR)DSS
55
VGS(th)
2.1
IDSS
-
-
-
IGSS
-
RDS(on)
-
Values
typ.
max.
Unit
V
--
34
- 0.1
0.1 1
- 100
10 100
0.0065 0.008
µA
nA
Ω
Semiconductor Group
2
28/Jan/1998
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