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Siemens Semiconductor Group |
SIPMOS ® Power Transistor
BUZ 11
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 11
VDS
50 V
ID
30 A
RDS(on)
0.04 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25 Ω
L = 15.6 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1301-A2
Values
30
120
30
1.9
Unit
A
mJ
14
± 20
75
-55 ... + 150
-55 ... + 150
≤ 1.67
≤ 75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
BUZ 11
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 19 A
Symbol
min.
Values
typ. max.
V(BR)DSS
50
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
--
34
0.1 1
10 100
10 100
0.03
0.04
Unit
V
µA
nA
Ω
Semiconductor Group
2
07/96
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