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Siemens Semiconductor Group |
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 103 SL
VDS
55 V
ID
28 A
RDS(on)
0.05 Ω
BUZ 103 SL
SPP28N05L
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
Q67040-S4008-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 28 A, VDD = 25 V, RGS = 25 Ω
L = 357 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 28 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
28
20
112
140
28
7.5
6
± 14
75
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
30/Jan/1998
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Thermal resistance, junction - case
Thermal resistance, junction - ambient
IEC climatic category, DIN IEC 68-1
BUZ 103 SL
SPP28N05L
Symbol
Tj
Tstg
RthJC
RthJA
Values
-55 ... + 175
-55 ... + 175
≤2
≤ 62
55 / 175 / 56
Unit
°C
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 50 µA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 20 A
V(BR)DSS
55
VGS(th)
1.2
IDSS
-
-
-
IGSS
-
RDS(on)
-
-
Values
typ.
max.
--
1.6 2
- 0.1
0.1 1
- 100
10 100
0.04
0.025
0.05
0.03
Unit
V
µA
nA
Ω
Semiconductor Group
2
30/Jan/1998
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