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BUZ102 반도체 회로 부품 판매점

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BUZ102 데이터시트, 핀배열, 회로
BUZ 102
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Type
BUZ 102
VDS
50 V
ID
42 A
RDS(on)
0.023
Maximum Ratings
Parameter
Continuous drain current
TC = 111 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 42 A, VDD = 25 V, RGS = 25
L = 102 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1351-A2
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
42
Unit
A
168
mJ
180
kV/µs
6
± 20
200
-55 ... + 175
-55 ... + 175
0.83
75
E
55 / 175 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96


BUZ102 데이터시트, 핀배열, 회로
BUZ 102
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID, Tj = -40 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 42 A
Symbol
min.
Values
typ. max.
Unit
V(BR)DSS
50
VGS(th)
2.1
IDSS
-
-
-
IGSS
-
RDS(on)
-
V
--
34
0.1
1
10
10
0.017
1
100
100
100
0.023
µA
nA
µA
nA
Semiconductor Group
2
07/96




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BUZ102 transistor

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