파트넘버.co.kr BUZ101L 데이터시트 PDF


BUZ101L 반도체 회로 부품 판매점

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BUZ101L 데이터시트, 핀배열, 회로
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
BUZ 101L
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 101L
VDS
50 V
ID
29 A
RDS(on)
0.06
Package
TO-220 AB
Ordering Code
C67078-S1355-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 31 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 29 A, VDD = 25 V, RGS = 25
L = 83 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Vgs
Ptot
Values
29
116
70
6
± 14
± 20
100
Unit
A
mJ
kV/µs
V
W
Semiconductor Group
1
07/96


BUZ101L 데이터시트, 핀배열, 회로
BUZ 101L
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJC
RthJA
Values
-55 ... + 175
-55 ... + 175
1.5
75
E
55 / 175 / 56
Unit
°C
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = -40 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 5 V, ID = 14.5 A
V(BR)DSS
50
VGS(th)
1.2
IDSS
-
-
-
IGSS
-
RDS(on)
-
V
--
1.6 2
0.1 1
1 100
10 100
10 100
0.045 0.06
µA
nA
µA
nA
Semiconductor Group
2
07/96




PDF 파일 내의 페이지 : 총 9 페이지

제조업체: Siemens Semiconductor Group

( siemens )

BUZ101L transistor

데이터시트 다운로드
:

[ BUZ101L.PDF ]

[ BUZ101L 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BUZ101

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) - Siemens Semiconductor Group



BUZ101L

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) - Siemens Semiconductor Group



BUZ101S

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) - Siemens Semiconductor Group



BUZ101SL

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) - Siemens Semiconductor Group



BUZ101SL-4

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) - Siemens Semiconductor Group



BUZ101SLE3045A

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) - Siemens Semiconductor Group