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Siemens Semiconductor Group |
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
BUZ 101L
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 101L
VDS
50 V
ID
29 A
RDS(on)
0.06 Ω
Package
TO-220 AB
Ordering Code
C67078-S1355-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 31 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 29 A, VDD = 25 V, RGS = 25 Ω
L = 83 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 29 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Vgs
Ptot
Values
29
116
70
6
± 14
± 20
100
Unit
A
mJ
kV/µs
V
W
Semiconductor Group
1
07/96
BUZ 101L
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJC
RthJA
Values
-55 ... + 175
-55 ... + 175
≤ 1.5
≤ 75
E
55 / 175 / 56
Unit
°C
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = -40 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 5 V, ID = 14.5 A
V(BR)DSS
50
VGS(th)
1.2
IDSS
-
-
-
IGSS
-
RDS(on)
-
V
--
1.6 2
0.1 1
1 100
10 100
10 100
0.045 0.06
µA
nA
µA
nA
Ω
Semiconductor Group
2
07/96
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