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PDF BUZ100SL-4 Data sheet ( Hoja de datos )
| Número de pieza | BUZ100SL-4 | |
| Descripción | SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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SIPMOS ® Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Preliminary data
BUZ 100SL-4
Type
VDS
BUZ 100SL-4 55 V
ID
7.4 A
RDS(on)
0.023 Ω
Package
P-DSO-28
Ordering Code
C67078-S. . . .- . .
Maximum Ratings
Parameter
Continuous drain current one channel active
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
ID = 7.4 A, VDD = 25 V, RGS = 25 Ω
L = 13.8 mH, Tj = 25 °C
Reverse diode dv/dt
IS = 7.4 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation ,one channel active
TA = 25 °C
Operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
Values
7.4
Unit
A
29.6
mJ
380
kV/µs
6
± 14
2.4
-55 ... + 175
-55 ... + 175
55 / 175 / 56
V
W
°C
Semiconductor Group
1
01/Oct/1997
1 page  
Preliminary data
BUZ 100SL-4
Power dissipation
Ptot = ƒ(TA)
2.8
W
2.4
Ptot 2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 °C 180
TA
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 5 V
7.5
A
6.5
ID 6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 140 °C 180
TA
Semiconductor Group
5
01/Oct/1997
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUZ100SL-4.PDF ] | |
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