KTD1304 반도체 회로 부품 판매점
NPN Silicon Epitaxial Planar Transistor
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 Galaxy Microelectronics |
NPN Silicon Epitaxial Planar Transistor
FEATURES
z High emitter-base voltage.
z High reverse hFE.
z Low on resistance.
Pb
Lead-free
APPLICATIONS
z Audio muting application.
Production specification
KTD1304
ORDERING INFORMATION
Type No.
Marking
KTD1304
MAX
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
25
VCEO
Collector-Emitter Voltage
20
VEBO
Emitter-Base Voltage
12
IC Collector Current -Continuous
300
IB Base Current
30
PC Collector Power Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mA
mW
℃
C113
Rev.A
www.gmicroelec.com
1
Production specification
NPN Silicon Epitaxial Planar Transistor
KTD1304
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
25
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
12
V
Collector cut-off current
Emitter cut-off current
ICBO VCB=25V,IE=0
IEBO VEB=12V,IC=0
0.1 μA
0.1 μA
DC current gain
hFE VCE=2V,IC=4mA
200
800
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA
0.25 V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1V
Transition frequency
fT VCE=10V, IC= 1mA
60 MHz
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
10 pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C113
Rev.A
www.gmicroelec.com
2
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제조업체: Galaxy Microelectronics
( gme )
KTD1304 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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