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BLUE ROCKET ELECTRONICS |
KTD1304
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
E-B 反向击穿电压高,反向放大高,导通电阻低。
High VEBO, high reverse hFE, low on resistance.
用途 / Applications
用于音频静音电路
Audio muting application.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN 1:Emitter
PIN 2:Base PIN 3:Collector
放大及印章代码 / hFE Classifications & Marking
hFE Range
Marking
200~800
HMAX
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KTD1304
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
25
20
12
300
30
200
150
-55~150
单位
Unit
V
V
V
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
DC Current Gain
hFE
DC Current Gain (Rev)
Collector to Emitter Saturation
Voltage
hFE(Rev)
VCE(sat)
Base to Emitter Saturation Voltage VBE(sat)
Transition Frequency
fT
Collector Output Capacitance
Cob
On Resistor
Ron
测试条件
Test Conditions
VCB=25V IE=0
VEB=12V IC=0
VCE=2.0V IC=4.0mA
VCE=-2.0V IC=-4.0mA
IC=100mA IB=10mA
IC=100mA IB=10mA
VCE=10V
VCB=10V
f=1.0MHz
f=1.0KHz
Vin=0.3V
IC=1.0mA
IE=0
IB=1.0mA
最小值 典型值
Min Typ
200
20
60
10
0.6
最大值
Max
0.1
0.1
800
0.25
1.0
单位
Unit
μA
μA
V
V
MHz
pF
Ω
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