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Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFR93A
DESCRIPTION
·High Power Gain
·High Current Gain Bandwidth Product
·Low Noise Figure
APPLICATIONS
·Designed for use in RF wideband amplifiers and oscillators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15 V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
12 V
2V
35 mA
0.3 W
175 ℃
-65~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFR93A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO Collector Cutoff Current
VCB= 5V; IE= 0
0.05 μA
hFE DC Current Gain
IC= 30mA ; VCE= 5V
40
fT Current-Gain—Bandwidth Product IC= 30mA ; VCE= 5V; f= 500MHz
4.5 6
GHz
COB Output Capacitance
IE= 0 ; VCB= 5V; f= 1MHz
0.7 pF
Cre Feedback Frequency
IE= 0 ; VCB= 5V; f= 1MHz
0.6 pF
NF Noise Figure
IC= 5mA ; VCE= 8V; f= 1GHz
1.9 dB
NF Noise Figure
IC= 5mA ; VCE= 8V; f= 2GHz
3 dB
isc Website:www.iscsemi.cn
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