파트넘버.co.kr BF821 데이터시트 PDF


BF821 반도체 회로 부품 판매점

SILICON EPITAXIAL TRANSISTORS



CDIL 로고
CDIL
BF821 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BF821
BF823
SILICON EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BF821 = 1W
BF823 = 1Y
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector–emitter voltage (RBE = 2,7 kW )
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
D.C. current gain
–IC = 25 mA; –VCE = 20 V
Feedback capacitance at f = 1 MHz
· IC = 0; –VCE = 30 V
Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 10 V
BF821
–VCB0 max.
–VCE0 max.
–VCER max.
–ICM max.
Ptot max.
Tj max.
300
300
BF823
250 V
250 V
–V
100 mA
250 mW
150 ° C
hFE >
50
Cre <
1,6 pF
fT >
60 MHz
Continental Device India Limited
Data Sheet
Page 1 of 3


BF821 데이터시트, 핀배열, 회로
BF821
BF823
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
BF821
BF823
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector–emitter voltage (RBE = 2,7 kW )
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Total power dissipation
–VCB0 max.
–VCE0 max.
–VCER max.
–VEB0 max.
–I C max.
–ICM max.
300
300
250 V
250 V
—V
5V
50 mA
100 mA
up to Tamb = 25 °C
Storage temperature
Junction temperature
Ptot max.
Tstg
Tj max.
250
–55 to +150
150
mW
°C
°C
THERMAL RESISTANCE
From junction to ambient
Rth j–a =
500 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 200V
Collector–emitter voltage
RBE = 2,7 kW ; VCE = 250 V
RBE = 2,7kW ; VCE = 200V; Tj = 150°C
Saturation voltage
–IC = 30 mA; –lB = 5 mA
D.C. current gain
IC = 25 mA; –VCE = 20 V
Transition frequency at f = 35 MHz
–IC = 10 mA; —VCE = 10 V
Feedback capacitance at f = 1 MHz
IC = 0; –VCE = 30 V
–ICB0 <
–ICER <
–ICER <
–VCEsat <
hFE >
fT >
Cre <
BF821
BF823
10 10 nA
50 50 nA
10 10 mA
0,8 V
50
60 MHz
1,6 pF
Continental Device India Limited
Data Sheet
Page 2 of 3




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BF821 transistor

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