BF820 반도체 회로 부품 판매점
NPN Transistor
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 JCET |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BF820/BF822 TRANSISTOR (NPN)
SOT-23
FEATURES
z Low current (max.50 mA)
z High voltage (max.300V)
z Telephony and professional communication equipment.
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: BF820:1V, BF822: 1X
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-Base Voltage
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
BF820
BF822
BF820
BF822
Value
300
250
300
250
5
50
0.25
150
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Test conditions
IC=100μA, IE=0
IC=1mA, IB=0
IE= 100μA, IC=0
BF820
BF822
BF820
BF822
Min
300
250
300
250
5
ICBO
VCB=200V,IE=0
IEBO
VEB= 5V,IC=0
hFE VCE= 20V,IC=25mA
50
VCE(sat)
IC=30mA,IB= 5mA
fT VCE=10V, IC= 10mA,f=100MHz
60
Cob VCB=30V,IE=0,f=1MHz
Unit
V
V
V
mA
W
℃
℃
Max
0.01
0.05
Unit
V
V
V
μA
μA
0.6 V
MHz
1.6 pF
A,May,2011
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제조업체: JCET
( jcet )
BF820 transistor
데이터시트 다운로드 :
[ BF820.PDF ]
[ BF820 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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