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BLUE ROCKET ELECTRONICS |
BCW70
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
低电流,低电压。
Low current, low voltage.
用途 / Applications
用于一般开关和放大。
General purpose switching and amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1:Emitter
PIN 2:Base PIN 3:Collector
放大及印章代码 / hFE Classifications & Marking
hFE Range
Marking
215~500
HH2
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BCW70
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current(DC)
Peak Collector Current
Peak Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
PC
Tj
Tstg
数值
Rating
-50
-45
-5.0
-100
-200
-200
250
150
-55~150
单位
Unit
V
V
V
mA
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=-100μA IE=0
VCEO IC=-500μA IB=0
Emitter to Base Breakdown Voltage VEBO IE=-100μA IC=0
Collector Cut-Off Current
ICBO VCB=-20 V IE=0
Emitter Base Cut-Off Current
IEBO VEB=-5.0V IC=0
DC Current Gain
hFE(1)
hFE(2)
VCE=-5.0V
VCE=-5.0V
IC=-2.0mA
IC=-10μA
Collector to Emitter Saturation
Voltage
VCE(sat)(1) IC=-10mA
VCE(sat)(2) IC=-50mA
IB=-0.5mA
IB=-2.5mA
Base to Emitter Saturation Voltage VBE(sat) (1) IC=-10mA
VBE(sat) (2) IC=-50mA
IB=-0.5mA
IB=-2.5mA
Base-Emitter On Voltage
Transition Frequency
Collector Capacitance
Noise Figure
VBE VCE=-5.0V IC=-2.0mA
fT
IC=-10mA VCE=-5.0V
f=100MHz
CC
VCB=-10V
f=1MHz
IE=0
VCE=-5.0V IC=-200μA
NF RS=2KΩ f=1KHz
B=200Hz
最小值 典型值 最大值 单位
Min Typ Max Unit
-50 V
-45
-5.0
215
-600
100
150
-80
-150
-720
-810
-0.1
-0.1
500
-300
-750
V
V
μA
μA
mV
mV
mV
mV
mV
MHz
4.5 pF
10 dB
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