파트넘버.co.kr BCW66G 데이터시트 PDF


BCW66G 반도체 회로 부품 판매점

NPN Transistor



JCET 로고
JCET
BCW66G 데이터시트, 핀배열, 회로
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCW66 TRANSISTOR (NPN)
FEATURES
Complementary to BCW68
BCW66 is subdivided into three groups F,G and H according to DC current gain
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
75
45
5
0.8
0.2
150
-55 ~ +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
hFE3
hFE4
VCE(sat)
VBE(sat)
fT
Cob
Cib
NF
Test conditions
IC= 10μA, IE=0
IC= 10mA, IB=0
IE=10μA, IC=0
VCB=45 V, IE=0
VEB=4 V, IC=0
VCE=10V, IC=0. 1mA
BCW66F
BCW66G
BCW66H
VCE=1V, IC= 10mA
VCE=1V, IC=100mA
VCE=2V, IC=500mA
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
IC=100mA, IB=10mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=10V,IC=20mA,f=100MHz
VCB=10V,IE=0,f=1MHz
VEB=0.5V,IE=0,f=1MHz
VCE=5V,IC=0.2mA,f=1KHz,
Rs=1KΩ,BW=200Hz
Min
75
45
5
35
50
80
75
110
180
100
160
250
35
60
100
100
MARKING
Rank
Range
Marking
F
100-250
EF
G
160-400
EG
H
250-630
EH
Typ Max Unit
V
V
V
0.02 μA
0.02 μA
250
400
630
0.3 V
0.7 V
2V
MHz
12 pF
80 pF
10 dB
C,May,2013


BCW66G 데이터시트, 핀배열, 회로
Typical Characteristics
BCW66
Static Characteristic
300
250 800uA 720uA 640uA
560uA
COMMON
EMITTER
Ta=25
200 480uA
400uA
150 320uA
100
50
0
0
240uA
160uA
IB=80uA
1234567
COLLECTOR-EMITTER VOLTAGE VCE (V)
8
1.2
β=10
V —— I
BEsat
C
1.0
0.8 Ta=25
0.6
0.4 Ta=100
0.2
0.0
0.1
200
180
160
140
120
100
80
60
40
20
0
1
0.3
1 10 100
COLLECTOR CURRENT IC (mA)
f
T
——
I
C
800
VCE=10V
Ta=25 oC
10
COLLECTOR CURRENT IC (mA)
100
P —— T
ca
h —— I
500 FE C
VCE= 1V
400 Ta=100 oC
300 Ta=25 oC
200
100
0
0.1
400
β=10
300
1 10 100
COLLECTOR CURRENT IC (mA)
V —— I
CEsat
C
800
200
100
0
0.1
100
10
Ta=100
Ta=25
1 10 100
COLLECTOR CURRENT IC (mA)
800
C / C ——
ob ib
V /V
CB EB
f=1MHz
IE=0 / IC=0
Ta=25 oC
Cib
Cob
1
0.1 1 10 20
REVERSE VOLTAGE V (V)
0.2
0.1
0.0
0
25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
150
C,May,2013




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BCW66G transistor

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