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PDF BCW66 Data sheet ( Hoja de datos )
| Número de pieza | BCW66 | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
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Hay una vista previa y un enlace de descarga de BCW66 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCW66 TRANSISTOR (NPN)
FEATURES
Complementary to BCW68
BCW66 is subdivided into three groups F,G and H according to DC current gain
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
75
45
5
0.8
0.2
150
-55 ~ +150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
hFE3
hFE4
VCE(sat)
VBE(sat)
fT
Cob
Cib
NF
Test conditions
IC= 10μA, IE=0
IC= 10mA, IB=0
IE=10μA, IC=0
VCB=45 V, IE=0
VEB=4 V, IC=0
VCE=10V, IC=0. 1mA
BCW66F
BCW66G
BCW66H
VCE=1V, IC= 10mA
VCE=1V, IC=100mA
VCE=2V, IC=500mA
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
IC=100mA, IB=10mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=10V,IC=20mA,f=100MHz
VCB=10V,IE=0,f=1MHz
VEB=0.5V,IE=0,f=1MHz
VCE=5V,IC=0.2mA,f=1KHz,
Rs=1KΩ,BW=200Hz
Min
75
45
5
35
50
80
75
110
180
100
160
250
35
60
100
100
MARKING
Rank
Range
Marking
F
100-250
EF
G
160-400
EG
H
250-630
EH
Typ Max Unit
V
V
V
0.02 μA
0.02 μA
250
400
630
0.3 V
0.7 V
2V
MHz
12 pF
80 pF
10 dB
C,May,2013
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCW66.PDF ] | |
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