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BCW66 반도체 회로 부품 판매점

NPN general-purpose transistor



NXP Semiconductors 로고
NXP Semiconductors
BCW66 데이터시트, 핀배열, 회로
BCW66 series
45 V, 800 mA NPN general-purpose transistor
Rev. 1 — 21 April 2017
Product data sheet
1 General description
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
PNP complements: BCW68F/G/H
2 Features and benefits
High current
AEC-Q101 qualified
3 Applications
General-purpose switching and amplification
4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO
IC
ICM
hFE
collector-emitter voltage
collector current
peak collector current
DC current gain
BCW66F
BCW66G
BCW66H
[1] pulsed: tp ≤ 300 μs, δ ≤ 0.02
Conditions
open base
single pulse; tp ≤ 1 ms
VCE = 1 V; IC = 100 mA; Tamb = 25 °C
[1]
Min Typ Max Unit
- - 45 V
- - 800 mA
- - 1A
100 -
160 -
250 -
250
400
600


BCW66 데이터시트, 핀배열, 회로
Nexperia
5 Pinning information
Table 2. Pinning
Pin Symbol
1B
2E
3C
Description
base
emitter
collector
BCW66 series
45 V, 800 mA NPN general-purpose transistor
Simplified outline
3
12
Graphic symbol
C
B
E
sym123
6 Ordering information
Table 3. Ordering information
Type number Package
Name
BCW66F
TO-236AB
BCW66G
BCW66H
Description
plastic surface-mounted package; 3 leads
7 Marking
Table 4. Marking
Type number
BCW66F
BCW66G
BCW66H
Marking code
[1] EQ%
[1] ER%
[1] ES%
[1] % = placeholder for manufacturing site code
8 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCBO
VCEO
VEBO
IC
ICM
IB
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
open emitter
open base
open collector
single pulse; tp ≤ 1 ms
BCW66x_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 April 2017
Version
SOT23
Min Max Unit
- 50 V
- 45 V
- 5V
- 800 mA
- 1A
- 100 mA
© Nexperia B.V. 2017. All rights reserved.
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BCW66 transistor

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