|
Infineon |
NPN Silicon AF Transistors
• For general AF applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCW68 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCW66K
32
1
Type
BCW66KF
BCW66KG
BCW66KH
Marking
EFs
EGs
EHs
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms
Base current
Peak base current
Total power dissipation-
TS ≤ 115 °C
Junction temperature
Storage temperature
Pin Configuration
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
Package
SOT23
SOT23
SOT23
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
45
75
5
800
1
100
200
500
150
-65 ... 150
Unit
V
mA
A
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
≤ 70
Unit
K/W
1 2011-09-30
BCW66K
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 45
-
-
IC = 10 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO 75
-
-
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
V(BR)EBO 5 - -
IE = 10 µA, IC = 0
Collector-base cutoff current
ICBO
VCB = 45 V, IE = 0
- - 0.02
VCB = 45 V, IE = 0 , TA = 150 °C
- - 20
Emitter-base cutoff current
IEBO
- - 20
VEB = 5 V, IC = 0
DC current gain2)
hFE
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.F
75 -
-
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.G
110 -
-
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.H
180 -
-
IC = 100 mA, VCE = 1 V, hFE-grp.F
100 160 250
IC = 100 mA, VCE = 1 V, hFE-grp.G
160 250 400
IC = 100 mA, VCE = 1 V, hFE-grp.H
250 350 630
IC = 500 mA, VCE = 1 V, hFE-grp.F, G, H
40 -
-
Unit
V
µA
nA
-
Collector-emitter saturation voltage2)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage2)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VCEsat
V
- - 0.3
- - 0.45
VBEsat
- - 1.25
- - 1.25
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
2 2011-09-30
|