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BLUE ROCKET ELECTRONICS |
BC860
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
高电流增益,低 VCE(sat)。
High current gain, Low collector-emitter saturation voltage.
用途 / Applications
用于一般放大
General power amplifier application.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1:Emitter
PIN 2:Base PIN 3:Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
A
125~250
B
220~475
Marking
H4E H4F
C
420-800
H4G
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BC860
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
-50
-45
-5.0
-100
350
150
-55~150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector to Base Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
VCEO
VCBO
VEBO
Collector Cut-Off Current
ICBO
DC Current Gain
hFE
Collector to Emitter Saturation VCE(sat)(1)
Voltage
VCE(sat)(2)
Base to Emitter Saturation
Voltage
VBE(sat)(1)
VBE(sat)(2)
Base to Emitter Voltage
VBE(1)
VBE(2)
Transition Frequency
fT
Collector Output Capacitance
Cob
Noise Figure
NF
测试条件
Test Conditions
IC=-10mA IB=0
IC=-10μA IE=0
IE=-10μA
VCB=-30V
VCE=-5.0V
IC=-10mA
IC=-100mA
IC=-10mA
IC=-100mA
VCE=-5.0V
VCE=-5.0V
VCE=-5.0V
f=100MHz
VCB=-10V
f=1.0MHz
VCE=-5.0V
Rg=10KΩ
IC=0
IE=0
IC=-2.0mA
IB=-0.5mA
IB=-5.0mA
IB=-0.5mA
IB=-5.0mA
IC=-2.0mA
IC=-10mA
IC=-10mA
IE=0
IC=-200μA
f=1.0KHz
最小值
Min
-45
-50
-5.0
125
-0.6
典型值 最大值 单位
Typ Max Unit
V
V
V
-0.075
-0.25
-0.7
-0.85
-0.65
-0.015
800
-0.3
-0.65
-0.75
-0.82
μA
V
V
V
V
V
V
150 MHz
4.5 pF
4.0 dB
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