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BC859C 반도체 회로 부품 판매점

PNP Transistors



Kexin 로고
Kexin
BC859C 데이터시트, 핀배열, 회로
SMD Type
PNP Transistors
BC859~BC860 (KC859~KC860)
Transistors
Features
Low current (max. 100 mA)
Low voltage (max. 45 V).
NPN complements: BC849 and BC850.
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
BC859
BC860
Collector - Emitter Voltage
BC859
BC860
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Peak Base Current
Collector Power Dissipation
(Note.1)
Thermal Resistance From Junction to Ambient (Note.1)
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
PC
Rthja
TJ
Tstg
Note.1: Transistor mounted on an FR4 printed-circuit board.
Rating
-30
-50
-30
-45
-5
-100
-200
-200
250
500
150
-55 to 150
Unit
V
mA
W
K/W
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BC859C 데이터시트, 핀배열, 회로
SMD Type
Transistors
PNP Transistors
BC859~BC860 (KC859~KC860)
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
BC859
BC860
BC859
BC860
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector capacitance
Emitter capacitance
BC859B:BC860B
BC859C:BC860C
Noise Figure
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μAIE=0
VCEO Ic= -1 mAIB=0
VEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE
IE= -100μAIC=0
VCB= -30 V , IE=0
VCB= -30 V , IE=0,TJ = 150
VEB= -5V , IC=0
IC=-10 mA, IB=-0.5mA
IC=-100 mA, IB=-5mA
IC=-10 mA, IB=-0.5mA (Note.1)
IC=-100 mA, IB=-5mA (Note.1)
VCE= -5V, IC= -2mA (Note.2)
VCE= -5 V, IC= -10mA (Note.2)
hFE VCE= -5V, IC= -2mA
Cc VCB= -10V, IE=Ie= 0,f=1MHz
Ce VEB= -0.5 V, IC=Ic= 0,f=1MHz
VCE= -5V, IC= -200uA,RS=2KΩ
f=30HZ to 15KHz
NF
VCE= -5V, IC= -200uA,RS=2KΩ
f=1 KHz,B=200HZ
fT VCE= -5V, IC= -10mA,f=100MHz
Note.1: VBEsat decreases by about 1.7 mV/K with increasing temperature.
Note.2: VBE decreases by about 2 mV/K with increasing temperature.
Min
-30
-50
-30
-45
-5
-600
220
420
Typ
-1
-75
-250
-700
-850
-650
4.5
10
Max
-15
-4
-100
-300
-600
-750
-820
475
800
Unit
V
nA
uA
nA
mV
pF
4
dB
4
100 MHz
Classification of hfe
Type
Range
Marking
BC859B
220-475
4B*
BC859C
420-800
4C*
BC860B
220-475
4F*
BC860C
420-800
4G*
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BC859C transistor

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