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PNP Silicon AF Transistor
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 hz and 15 kHz
• Complementary types:
BC846...-BC850... (NPN)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
1Pb-containing package may be available upon special request
BC856...-BC860...
1 2007-09-25
BC856...-BC860...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
fT - 250 - MHz
Ccb - 1.5 - pF
Ceb - 8 -
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h11e
h12e
kΩ
- 2.7 -
- 4.5 -
- 8.7 -
10-4
- 1.5 -
-2-
-3-
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h21e
-
- 200 -
- 330 -
- 600 -
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
Noise figure
IC = 0.2 mA, VCE = 5 V, f = 1 kHz,
D f = 200 Hz, RS = 2 kΩ, BC859, BC850
h22e
F
µS
- 18 -
- 30 -
- 60 -
- 1 4 dB
Equivalent noise voltage
IC = 200 mA, VCE = 5 V, RS = 2 kΩ,
f = 10...50 Hz, BC860
Vn - - 0.11 µV
5 2007-09-25