BC857C 반도체 회로 부품 판매점
PNP Transistor
|
|
 Multicomp |
PNP Transistor
General Purpose
SOT-23
Features:
• Low current (maximum100 mA)
• Low voltage (maximum 65 V)
Applications:
• General purpose switching and amplification
Maximum Ratings and Characteristics : Tamb = 25°C unless otherwise specified
Parameter
Symbol
Value
Collector - Base Voltage
- BC856
- BC857
- BC858
VCBO
-80
-50
-30
Collector - Emitter Voltage
- BC856
- BC857
- BC858
Emitter - Base Voltage
Collector Current - Continuous
Collector Dissipation
Junction and Storage Temperature
VCEO
Vebo
IC
PC
Tj, Tstg
-65
-45
-30
-5
-0.1
250
-65 to +150
Unit
V
A
mW
°C
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emiter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
BC856, 857
BC856A, 857A, 858A
BC856B, 857B, 858B
BC857C, 858C
Symbol
V(BR) CBO
V(BR) CEO
V (BR) EBO
ICBO
IEBO
hFE
Test Conditions
IC = -10 µA IE=0 BC856
BC857
BC858
IC = -10 µA IB=0 BC856
BC857
BC858
IE = -1 µA IC = 0
VCB = -30 V IE = 0
VEB = -5 V, IC = 0
VCE = -5 V, IC = -2 mA
Minimum Typical Maximum Unit
-80
-50 -
-30
-
-65 V
-45
-30
-5 -
-
- -1 -15 nA
- - -0.1 µA
125 475
125
220
-
250
475
-
420 800
Collector-Emitter Saturation Voltage
VCE (sat)
IC = -100 mA, IB = -5 mA
IC = -10 mA, IB = -0.5 mA
-
-
-0.65
-0.3
V
www.element14.com
www.farnell.com
www.newark.com
Page <1>
28/06/12 V1.1
PNP Transistor
General Purpose
Parameter
Base - Emitter Saturation Voltage
Base Emitter Voltage
Collector Capacitance
Transition Frequency
Transition Frequency
Symbol
VBE (sat)
VBE
CC
F
Test Conditions
Minimum Typical Maximum Unit
IC = -10 mA, IB = -0.5 mA
IC = -100 mA, IB = -5 mA
-
-0.7
-0.85
-
V
IC = -2 mA, VCE = -5 V
IC = -10 mA, VCE = -5 V
-0.6
-0.65
-0.75
-0.82
V
VCB = -10 V, IE = Ie = 0
f = 1 MHz
- 4.5 - pF
IC = -200 µA, VCE = -5 V,
Rs=2 kΩ f = 1 KHz,
B = 200 Hz
-
2 10 dB
fT
VCE = -10 IC = -50,
f = 20 MH
100 -
- MHz
Maximum Ratings and Characteristics : Tamb = 25°C unless otherwise specified
Ratings and Characteristic Curves
BC857A : VCE = - 5 V
(1) Tamb = 150°C
(2) Tamb = 25°C
(3) Tamb = -55°C
DC Current Gain as a Function of Collector
Current; Typical Values
BC857A : VCE = -5 V
(1) Tamb = -55°C
(2) Tamb = 25°C
(3) Tamb = 150°C
Base-Emitter Voltage as a Function of
Collector Current; Typical Values
www.element14.com
www.farnell.com
www.newark.com
Page <2>
28/06/12 V1.1
|
PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Multicomp
( multicomp )
BC857C transistor
데이터시트 다운로드 :
[ BC857C.PDF ]
[ BC857C 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BC857
PNP Transistor - Multicomp
BC857
Silicon PNP transistor - BLUE ROCKET ELECTRONICS
BC857
PNP Silicon Epitaxial Transistors - Kingtronics
BC857
PNP GENERAL PURPOSE TRANSISTORS - Pan Jit International
BC857
SMALL SIGNAL PNP TRANSISTORS - STMicroelectronics
BC857
PNP EPITAXIAL SILICON TRANSISTOR - Fairchild Semiconductor
BC857
Small Signal Transistors (PNP) - General Semiconductor
BC857
PNP Silicon Transistor (General purpose application Switching application) - AUK corp
BC857
Surface mount General Purpose Si-Epitaxial-Planar Transistors - Diotec Semiconductor