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BLUE ROCKET ELECTRONICS |
BC850
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
低电流,低电压。
Low current, Low voltage.
用途 / Applications
用于一般放大及开关电路。
General power amplifier and switching application.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1:Emitter
PIN 2:Base PIN 3:Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
A
125~250
B
200~450
Marking
H2E 2FH
C
420~800
H2G
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BC850
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
50
45
5.0
100
350
150
-55~150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
符号
Symbol
VCBO
VCEO
VEBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE
fT
Cob
NF
测试条件
Test Conditions
IC=10μA
IE=0
IC=10mA IB=0
IE=10μA
VCB=30 V
VCE=5.0V
IC=100mA
IC=0
IE=0
IC=2.0mA
IB=5.0mA
IC=100mA
VCE=5.0V
VCE=5.0V
f=100MHz
VCB=10V
f=1.0MHz
VCE=5.0V
Rg=10KΩ
IB=5.0mA
IC=2.0mA
IC=10mA
IE=0
IC=200μA
f=1.0KHz
最小值
Min
50
典型值 最大值 单位
Typ Max Unit
V
45 V
5.0 V
0.015 μA
125 800
0.2 0.6 V
0.9 V
0.58 0.66 0.7 V
300 MHz
2.5 4.5 pF
1.0 dB
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