BC848A 판매점 - General Purpose Transistors

BC848A 반도체 회로 부품 판매점

General Purpose Transistors

ON Semiconductor

BC846, BC847, BC848

General Purpose

Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Collector-Emitter Voltage

BC846

BC847

BC848

VCEO

Collector-Base Voltage

BC846

BC847

BC848

VCBO

Emitter-Base Voltage

BC846

BC847

BC848

VEBO

6.0

5.0

Collector Current − Continuous

IC 100 mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board,

(Note 1) TA = 25°C

200 mW

Thermal Resistance,

Junction−to−Ambient

Junction and Storage Temperature

RqJA

TJ, Tstg

620

−55 to

+150

°C/W

°C

1. FR−5 = 1.0 x 0.75 x 0.062 in.

www.onsemi.com

COLLECTOR

BASE

EMITTER

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

XX MG

XX = Specific Device Code

M = Month Code

G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 12 of this data sheet.

April, 2015 − Rev. 12

Publication Order Number:

BC846AWT1/D

BC846, BC847, BC848

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 10 mA)

BC846 Series V(BR)CEO 65

−

BC847 Series

45 −

−

BC848 Series

30 −

−

Collector −Emitter Breakdown Voltage

(IC = 10 mA, VEB = 0)

BC846 Series V(BR)CES

−

BC847 Series

50 −

−

BC848 Series

30 −

−

Collector −Base Breakdown Voltage

(IC = 10 mA)

BC846 Series V(BR)CBO 80

−

BC847 Series

50 −

−

BC848 Series

30 −

−

Emitter −Base Breakdown Voltage

(IE = 1.0 mA)

BC846 Series V(BR)EBO 6.0

−

BC847 Series

6.0 −

−

BC848 Series

5.0 −

−

Collector Cutoff Current (VCB = 30 V)

ON CHARACTERISTICS

(VCB = 30 V, TA = 150°C)

ICBO

− − 15 nA

− − 5.0 mA

DC Current Gain

(IC = 10 mA, VCE = 5.0 V)

BC846A, BC847A, BC848A

BC846B, BC847B, BC848B

BC847C, BC848C

hFE

− 90 −

− 150 −

− 270 −

−

(IC = 2.0 mA, VCE = 5.0 V)

BC846A, BC847A, BC848A

BC846B, BC847B, BC848B

BC847C, BC848C

Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

Output Capacitance (VCB = 10 V, f = 1.0 MHz)

Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

VCE(sat)

VBE(sat)

VBE(on)

Cobo

110 180 220

200 290 450

420 520 800

− − 0.25 V

− − 0.6

− 0.7 −

− 0.9 −

580 660 700 mV

− − 770

100 −

− MHz

− − 4.5 pF

− − 10 dB

www.onsemi.com

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BC848A transistor

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BC848A 반도체 회로 부품 판매점

General Purpose Transistors

국내 전력반도체 판매점

일반적인 전자부품 판매점

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