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BC847C 반도체 회로 부품 판매점

SMD General Purpose NPN Transistors



Diotec Semiconductor 로고
Diotec Semiconductor
BC847C 데이터시트, 핀배열, 회로
BC846 ... BC850
BC846 ... BC850
SMD General Purpose NPN Transistors
SMD Universal-NPN-Transistoren
IC = 100 mA
hFE = 180/290/520
Tjmax = 150°C
VCEO = 30...65 V
Ptot = 250 mW
Version 2015-10-30
~ SOT-23 (TO-236)
2.9 ±0.1
0.4+0.1
-0.05
3
Type
Code
1
1.9±0.1
2
1.1+0.1
-0.2
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1
Features
General Purpose
Three current gain groups
Compliant to RoHS, REACH,
Conflict Minerals 1)
Mechanical Data 1)
Taped and reeled
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Besonderheiten
Universell anwendbar
Drei Stromverstärkungsklassen
RoHS
Pb
Konform zu RoHS, REACH,
Konfliktmineralien 1
Mechanische Daten 1)
3000 / 7“
Gegurtet auf Rolle
1=B 2=E 3=C
Dimensions - Maße [mm]
Weight approx.
Case material
Solder & assembly conditions
0.01 g
UL 94V-0
260°C/10s
Gewicht ca.
Gehäusematerial
Löt- und Einbaubedingungen
MSL = 1
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 2 mA
B open
E open
C open
Grenzwerte (TA = 25°C)
BC846
BC847
BC850
BC848
BC849
VCEO
65 V
45 V
45 V
30 V
VCBO
VEBO
80 V 50 V
6V
50 V
30 V
5V
Ptot 250 mW 2)
IC 100 mA
ICM 200 mA
Tj -55...+150°C
TS -55…+150°C
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Group A
hFE
90
Group B
hFE
150
Group C
hFE
270
Group A
hFE
110
180
220
Group B
hFE
200
290
450
Group C
hFE
420
520
800
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1


BC847C 데이터시트, 핀배열, 회로
BC846 ... BC850
Characteristics (Tj = 25°C)
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
VCEsat
VCEsat
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VBEsat
VBEsat
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VBE
VBE
VCB = 30 V, (E open)
VCE = 30 V, Tj = 125°C, (E open)
Emitter-Base cutoff current
ICBO
ICBO
VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
IEBO
VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
fT
VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
CEBO
RthA
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking of available current gain groups
Stempelung der lieferbaren
Stromverstärkungsgruppen
BC846A = 1A
BC846B = 1B
BC846C = 1C
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
90 mV
250 mV
– 200 mV 600 mV
– 700 mV –
– 900 mV –
580 mV
660 mV
700 mV
720 mV
– – 15 nA
– – 5 µA
– – 100 nA
– 300 MHz –
3.5 pF
6 pF
– 9 pF –
< 420 K/W 2)
BC856 ... BC860
BC847A = 1E
BC847B = 1F
BC847C = 1G
BC848A = 1E
BC848B = 1F
BC848C = 1G
BC850B = 1F
BC850C = 1G
BC849B = 1F
BC849C = 1G
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses tp = 300 µs, duty cycle ≤ 2%
Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/
© Diotec Semiconductor AG




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BC847C transistor

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