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SEMTECH |
BC817W / BC818W
NPN Silicon Epitaxial Planar Transistors
for general purpose and switching applications
These transistors are subdivided into three groups
–16, -25, -40 according to their current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
BC817W
BC818W
BC817W
BC818W
Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature Range
1) Transistor mounted on an FR4 printed-circuit board.
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
RθJA
TJ
Ts
Value
50
30
45
25
5
500
1
200
200
625 1)
150
-65 to +150
Unit
V
V
V
mA
A
mA
mW
K/W
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/02/2006
BC817W / BC818W
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 500 mA
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE= 10 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Voltage
at IC = 500 mA, VCE = 1 V
Collector Cutoff Current
at VCB = 20 V
at VCB = 20 V, TJ = 150 OC
Emitter Cutoff Current
at VEB = 5 V
Transition Frequency
at VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector Capacitance
at VCB = 10 V, f = 1 MHz
Symbol
Min.
-16W
-25W
-40W
BC817W
BC818W
BC817W
BC818W
hFE
hFE
hFE
hFE
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
VBE
ICBO
IEBO
fT
Cc
100
160
250
40
50
30
45
25
5
-
-
-
-
-
100
-
Max.
250
400
600
-
-
-
-
-
-
0.7
1.2
100
5
100
-
5
Unit
-
-
-
-
V
V
V
V
V
nA
µA
nA
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/02/2006
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