BC858AW 반도체 회로 부품 판매점
PNP SMALL SIGNAL TRANSISTOR
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 DIODES |
Features
Ideally Suited for Automatic Insertion
Complementary NPN Types Available (BC846AW – BC848CW)
For switching and AF Amplifier Applications
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
BC856AW-BC858CW
PNP SMALL SIGNAL TRANSISTOR IN SOT323
Mechanical Data
Case: SOT323
Case material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
SOT323
C
B
Top View
E
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Product
Compliance
BC856AW-7-F
BC856BW-7-F
BC856BW-13-F
BC857AW-7-F
BC857BW-7-F
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
Marking
K3A
K3B
K3B
K3A
K3B
Reel Size
(inches)
7
7
13
7
7
Quantity
per Reel
3,000
3,000
10,000
3,000
3,000
Product
Compliance Marking
BC857BWQ-13-F
BC857CW-7-F
BC858AW-7-F
BC858BW-7-F
BC858CW-7-F
Automotive
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
K3B
K3G
K3A
K3B
K3G
Reel Size
(inches)
13
7
7
7
7
Quantity
per Reel
10,000
3,000
3,000
3,000
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. Tape width is 8mm. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
xxx
xxx = Product Type Marking Code (See Ordering Information)
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb Mar
23
2012
Z
Apr
4
2013
A
May Jun
56
2014
B
Jul
7
2015
C
Aug Sep
89
2016
D
Oct
O
2017
E
Nov Dec
ND
BC856AW – BC858CW
Document Number: DS30251 Rev. 10 - 2
1 of 5
www.diodes.com
November 2013
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Emitter Current
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
VCBO
VCEO
VEBO
IC
ICM
IEM
BC856AW-BC858CW
Value
-80
-50
-30
-65
-45
-30
-5.0
-100
-200
-200
Unit
V
V
V
mA
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 6)
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-65 to +150
Unit
mW
C/W
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
DC Current Gain (Note 7)
Current Gain Group
Collector Cutoff Current
BC856
BC857
BC858
BC856
BC857
BC858
A
B
C
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Output Capacitance
Transition Frequency
Noise Figure
Symbol
BVCBO
BVCEO
BVEBO
hFE
ICBO
VCE(sat)
VBE(on)
VBE(sat)
Cobo
fT
Min
-80
-50
-30
-65
-45
-30
-5
125
220
420
-
-
-600
-
-
-
100
NF -
Typ
-
-
-
180
290
520
-
-75
-250
-650
-
-700
-850
3
200
-
Max
-
Unit Test Condition
V IC = -100nA
-
-
250
475
800
-15
-4
-300
-650
-750
-820
-
-950
4.5
-
10
V IC = -10mA
V IE = -100nA
- VCE = -5.0V, IC = -2.0mA
nA
µA
mV
mV
mV
pF
MHz
dB
VCB = -30V
VCB = -30V, TA = +150°C
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -2mA, VCE = -5V
IC = -10mA, VCE = -5V
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5mA
VCB = -10V, f = 1.0MHz
VCE = -5V, IC = -10mA,
f = 100MHz
VCE = -5V, IC = -200µA
RS = 2kΩ, f = 1kHz
∆f = 200Hz
Notes:
6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
BC856AW – BC858CW
Document Number: DS30251 Rev. 10 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
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제조업체: DIODES
( diodes )
BC858AW transistor
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