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Infineon |
NPN Silicon AF Transistors
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types:
BC857...-BC860...(PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q1011)
BC847...-BC850...
1BC847BL3 is not qualified according AEC Q101
Type
BC847A
BC847B
BC847BL3*
BC847BW
BC847C
BC847CW
BC848A
BC848B
BC848BL3
BC848BW
BC848C
BC848CW
BC849B
BC849C
BC849CW
BC850B
BC850BW
BC850C
BC850CW
Marking
1Es 1=B
1Fs 1=B
1F 1=B
1Fs 1=B
1Gs 1=B
1Gs 1=B
1Js 1=B
1Ks 1=B
1K 1=B
1Ks 1=B
1Ls 1=B
1Ls 1=B
2Bs 1=B
2Cs 1=B
2Cs 1=B
2Fs 1=B
2Fs 1=B
2Gs 1=B
2Gs 1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
* Not qualified according AEC Q101
1
Package
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
2011-09-09
BC847...-BC850...
Maximum Ratings
Parameter
Collector-emitter voltage
BC847..., BC850...
BC848..., BC849...
Symbol
VCEO
Value
45
30
Collector-emitter voltage
BC847..., BC850...
BC848..., BC849...
VCES
50
30
Collector-base voltage
BC847..., BC850...
BC848..., BC849...
VCBO
50
30
Emitter-base voltage
BC847..., BC850...
BC848..., BC849...
Collector current
Peak collector current, tp ≤ 10 ms
Total power dissipation-
TS ≤ 71 °C, BC847-BC850
TS ≤ 135 °C, BC847BL3-BC848BL3
TS ≤ 124 °C, BC847W-BC850W
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BC847-BC850
BC847BL3-BC848BL3
BC847W-BC850W
VEBO
IC
ICM
Ptot
Tj
Tstg
Symbol
RthJS
6
6
100
200
330
250
250
150
-65 ... 150
Value
≤ 240
≤ 60
≤ 105
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
2 2011-09-09
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