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BC808-25LT1 반도체 회로 부품 판매점

General Purpose Transistors



ON Semiconductor 로고
ON Semiconductor
BC808-25LT1 데이터시트, 핀배열, 회로
BC808−25LT1, BC808−40LT1
General Purpose
Transistors
PNP Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−25
−30
−5.0
−500
V
V
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
5x M G
G
1
5x = Device Code
x = F or G
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
1
Publication Order Number:
BC808−25LT1/D


BC808-25LT1 데이터시트, 핀배열, 회로
BC808−25LT1, BC808−40LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V)
(IC = −500 mA, VCE = −1.0 V)
BC808−25
BC808−40
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
Base −Emitter On Voltage
(IC = −500 mA, IB = −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(on)
fT
Cobo
Min Typ Max
−25 −
−30 −
−5.0 −
− − −100
− − −5.0
160 − 400
250 − 600
40 −
− − −0.7
− − −1.2
100 −
− 10 −0.7
Unit
V
V
V
nA
mA
V
V
MHz
pF
ORDERING INFORMATION
Device
BC808−25LT1
BC808−25LT1G
BC808−40LT1
BC808−40LT1G
Specific Marking
5F
5G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2




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