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Infineon |
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type:
BC817.../W, BC818.../W (NPN)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BC807.../BC808...
Type
BC807-16
BC807-16W
BC807-25
BC807-25W
BC807-40
BC807-40W
BC808-25
BC808-25W
BC808-40
BC808-40W
Marking
Pin Configuration
5As 1 = B 2 = E 3 = C -
-
5As 1 = B 2 = E 3 = C -
-
5Bs 1 = B 2 = E 3 = C -
-
5Bs 1 = B 2 = E 3 = C -
-
5Cs 1 = B 2 = E 3 = C -
-
5Cs 1 = B 2 = E 3 = C -
-
5Fs 1 = B 2 = E 3 = C -
-
5Fs 1 = B 2 = E 3 = C -
-
5Gs 1 = B 2 = E 3 = C -
-
5Gs 1 = B 2 = E 3 = C -
-
1Pb-containing package may be available upon special request
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
1 2007-06-08
BC807.../BC808...
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
BC807...
BC808...
VCEO
Collector-base voltage
BC807...
BC808...
VCBO
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
TS ≤ 79 °C BC807, BC808
TS ≤ 130 °C BC807W, BC808W
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BC807, BC808
BC807W, BC808W
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Symbol
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
45
25
50
30
5
500
1000
100
200
330
250
150
-65 ... 150
Value
≤ 215
≤ 80
Unit
V
mA
mW
°C
Unit
K/W
2 2007-06-08
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