BC808-16 반도체 회로 부품 판매점
PNP General Purpose Transistor
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PNP General Purpose Transistor
BC808
FEATURES
• Suitable for AF-Driver stages and low power output
stages
MECHANICAL DATA
• Case: SOT-23 Plastic
• Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
• Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter-base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
IC=-100µA,IE=0
IC=-10mA,IB=0
IE=-100µA,IC=0
VCB=-25V,IE=0
VCB=-4V,IC=0
VCE=-1V,IC=-100mA
VCE=-1V,IC=-300mA
IC=-500mA,IB=-50mA
VCE=-1V,IC=-300mA
VCE=-5V,IC=-10mA,
f=50MHz
VCB=-10V,f=1MHz
VCBO
VCEO
VEBO
ICBO
IEBO
hFE1
hFE1
VCE(sat)
VBE
fT
Cob
Value
-30
-25
-5
-0.8
300
150
-65~+150
Unit
V
V
V
A
mW
℃
℃
Min.
Typ.
Max.
Unit
-30 V
-25 V
-5 V
-0.1 uA
-0.1 uA
100 630
60
-0.7 V
-1.2 V
100 MHz
12 pF
REV. 2, Jun-2012, KSPR03
SOT-23 Outline Dimension
Device Marking :
Device P/N
BC808-16
BC808-25
BC808-40
Classification of hFE
100-250
160-400
250-630
Marking code
5E
5F
5G
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BC808-16 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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