파트넘버.co.kr BC807-25 데이터시트 PDF


BC807-25 반도체 회로 부품 판매점

SILICON PLANAR EPITAXIAL TRANSISTORS



CDIL 로고
CDIL
BC807-25 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC807
BC808
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistor
Marking
BC807 = 5D
BC807–16 = 5A
BC807–25 = 5B
BC807-40 = 5C
BC808 = 5H
BC808–16 = 5E
BC808–25 = 5F
BC808–40 = 5G
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 5 V
–VCES
–VCE0
–ICM
Ptot
Tj
BC807
max. 50
max. 45
max.
max.
max.
1000
250
150
BC808
30 V
25 V
mA
mW
°C
fT >
80 MHz
Continental Device India Limited
Data Sheet
Page 1 of 4


BC807-25 데이터시트, 핀배열, 회로
BC807
BC808
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
–VCES
–IC = 10 mA
–VCE0
Emitter–base voltage (open collector)
–VEB0
BC807
max. 50
max. 45
max. 5
BC808
30 V
25 V
5V
Collector current (DC)
Collector current (peak value)
Emitter current (peak value)
Base current (DC)
Base current (peak value)
Total power dissipation at Tamb = 25 °C *
Storage temperature
Junction temperature
–IC
–ICM
IEM
–IB
–IBM
Ptot
Tstg
Tj
max.
max.
max.
max.
max.
max.
max.
500
1000
1000
100
200
250
–55 to +150
150
mA
mA
mA
mA
mA
mW
°C
°C
THERMAL RESISTANCE*
From junction to ambient
Rth j–a =
500 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 20V; Tj = 25°C
IE = 0; –VCB = 20V; Tj = 150°C
Emitter cut–off current
IC = 0; VEB = 5 V
Base emitter voltage *
–IC = 500 mA; –VCE = 1 V
Saturation voltage
–IC = 500 mA; –IB = 50 mA
D.C. current gain
–IC = 500 mA; –VCE = 1 V
–IC = 100 mA; –VCE = 1 V; BC807; BC808
BC807–16
BC808–16
BC807–25
BC808–25
BC807–40
BC808–40
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; –VCB = 10 V
–ICB0
–ICB0
max. 100 nA
max. 5 µA
–IEB0 max. 10 µA
–VBE max. 1,2 V
–VCEsat max. 700 mV
hFE min. 40
hFE 100 to 600
hFE 100 to 250
hFE 160 to 400
hFE 250 to 600
fT > 80 MHz
Cc typ. 8 pF
Continental Device India Limited
Data Sheet
Page 2 of 4




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BC807-25 transistor

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