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PDF XP05534 Data sheet ( Hoja de datos )
| Número de pieza | XP05534 | |
| Descripción | Silicon NPN epitaxial planar type Transistors | |
| Fabricantes | Panasonic Semiconductor | |
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Composite Transistors
XP05534
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• High transition frequency fT
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SC2404 × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
30
20
3
15
150
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
0.2±0.05
65
4
1 23
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
Unit: mm
0.12+–00..0025
1: Emitter (Tr1)
2: Base (Tr1)
3: Base (Tr2)
EIAJ: SC-88
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Marking Symbol: IS
Internal Connection
65
4
Tr1 Tr2
123
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 V
Base-emitter voltage
VBE VCB = 6 V, IE = −1 mA
720 mV
Forward current transfer ratio
hFE VCB = 6 V, IE = −1 mA
40
Transition frequency
fT VCB = 6 V, IE = −1 mA, f = 100 MHz 450 650
MHz
Reverse transfer capacitance
(Common emitter)
Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz
0.8 1.0
pF
Power gain
Noise figure
GP VCB = 6 V, IE = −1 mA, f = 100 MHz
NF VCB = 6 V, IE = −1 mA, f = 100 MHz
24
3.3
dB
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJJ00192AED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet XP05534.PDF ] | |
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