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TEMIC |
Silicon NPN Planar RF Transistor
Applications
For broadband amplifiers up to 1 GHz.
Features
D High power gain
D SMD-package
1
BFS17/BFS17R
1
23
94 9280
BFS17 Marking: E1
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60°C
Storage temperature range
Maximum Thermal Resistance
Parameters
Junction ambient on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35 mm Cu
32
95 10527
BFS17R Marking: E4
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
25
15
2.5
25
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Symbol
RthJA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
1 (5)
BFS17/BFS17R
Electrical DC Characteristics
Tamb = 25°C
Parameters / Test Conditions
Collector-emitter cut-off current
VCE = 25 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2.5 V, IC = 0
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector saturation voltage
VCE = 1 V, IC = 20 mA
DC forward current transfer ratio
VCE = 1 V, IC = 2 mA
VCE = 1 V, IC = 25 mA
Symbol Min. Typ. Max. Unit
ICES 100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO
15
V
VCEsat
750 mV
hFE 20 100 150
hFE 20
Electrical AC Characteristics
Tamb = 25°C
Parameters / Test Conditions
Symbol Min. Typ. Max. Unit
Transition frequency
VCE = 5 V, IC = 14 mA, f = 300 MHz
VCE = 5 V, IC = 2 mA, f = 300 MHz
VCE = 5 V, IC = 25 mA, f = 300 MHz
fT 2.4
fT 1 1.5
fT 1.3 2.1
GHz
GHz
GHz
Collector-emitter capacitance
VCE = 5 V, f = 1 MHz
Cce 0.2 pF
Collector-base capacitance
VCB = 5 V, f = 1 MHz
Ccb 0.45 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb 0.8 pF
WNoise figure
VCE = 5 V, IC = 2 mA, ZS = 50 , f = 800 MHz
F
3.5 5 dB
Power gain
WVCE = 5 V, IC = 2 mA, ZS = 50 ,
f = 200 MHz
f = 800 MHz
Gpe 23 dB
Gpe 11 dB
Linear output voltage – two tone intermodulation
VCE = 5 V, IC = 14 mA, dIM = 60 dB,
Wf1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
V1 = V2
100
mV
Third order intercept point
VCE = 5 V, IC = 14 mA, f = 800 MHz
IP3
23 dBm
2 (5) TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
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