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PDF BF257 Data sheet ( Hoja de datos )
| Número de pieza | BF257 | |
| Descripción | HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BF257 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol BF BF BF
257 258 259
VCEO
VCER
VCBQ
160 250 300
160 250 300
160 250 300
VEBO
c
PD
5.0
0.1
0.8
4.57
pd
Tj, T stg
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc'
Watt
mW/°C
Watt
mW/°C
°C
Symbol
RflJC
Max
35
Unit
°C/W
BF257
BF258
BF259
CASE 79, STYLE 1
TO-39 (TO-205AD)
HIGH VOLTAGE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 30 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 100 uAdc. Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 100 uAdc, lc = 0)
Collector Cutoff Current
(VCB = 100 Vdc. IE = 0)
(VCB = 200 Vdc, Ie = 0)
(VCB = 250 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 30 mAdc, VcE 1 Vdc)
Collector-Emitter Saturation Voltage
(IC = 30 mAdc, Ib = 6.0 mAdc)
DYNAMIC CHARACTERISTICS
BF257
BF258
BF259
BF257
BF258
BF259
BF257
BF258
BF259
V(BR)CEO
V(BR)CBO
V(BR)EB0
ICBO
160
250
300
160
250
300
5.0
hFE
VCE(sat)
25
80
Vdc
Vdc
Vdc
nAdc
50
50
50
1.0 Vdc
Current Gain Bandwidth Product
(IC = 30 mAdc, Vce = 1 Vdc, f = 100 MHz)
Reverse Transfer Capacitance
(VCB = 30 Vdc, Ie = 0, f = 500 kHz)
Collector-Base Capacitance
(VCB = 10 Vdc, Ie = 0. f = 500 kHz)
Ccb
PF
pF
4-221
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BF257.PDF ] | |
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