파트넘버.co.kr BCY79 데이터시트 PDF


BCY79 반도체 회로 부품 판매점

TRANSISTOR



Motorola Semiconductors 로고
Motorola Semiconductors
BCY79 데이터시트, 핀배열, 회로
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 10 Ohms)
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Tc = 100°C
Derate above 25 °C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
VCEO
VCES
V£BO
ic
PD
pd
Tj- T stg
Symbol
R0JC
R0JA
BCY BCY
78 79
32 45
32 45
5
0.2
0.6
2.28
1
6.67
-65 to +200
Max
150
450
Unit
Vdc
Vdc
Vdc
Amp
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BCY78
BCY79
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
Characteristic
Type
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, Ic = 0)
Emitter-Base Breakdown Voltage
(IE = 2 LiAdc, Ic = 0)
Collector Cutoff Current
(V C E = 32 V)
(VC E = 45 V)
(VcE = 32 V, Ta = 100°C, Vbe = 0.2 V)
(VcE = 45 V, Ta = 100°C, Vbe = 0.2 V)
(VcE = 25V,Ta = 150°)
(VcE = 35 V, Ta = 150°)
Emitter Base Cutoff Current
(V E B = 4 V)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 uAdc, VcE = 5 Vdc)
(IC = 2 mAdc, VcE = 5 Vdc)
(IC = 10 mAdc, VcE = 1 Vdc)
(IC = 100 mAdc, VcE = 1 Vdc)
BCY78
BCY79
all
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
all
V(BR)CEO
V(BR)EBO
ices
ICEX
ices
'EBO
BCY79-VII, BCY78-VII
BCY79-VIII, BCY78-VIII
BCY79-IX, BCY78-IX
BCY79-X, BCY78-X
BCY79-VII, BCY78-VII
BCY79-VIII, BCY78-VIII
BCY79-IX, BCY78-IX
BCY79-X, BCY78-X
BCY79-VII, BCY78-VII
BCY79-VIII, BCY78-VIII
BCY79-IX, BCY78-IX
BCY79-X, BCY78-X
BCY79-VII, BCY78-VII
BCY79-VIII, BCY78-VIII
BCY79-IX, BCY78-IX
BCY79-X, BCY78-X
hFE
Co I lector- Emitter Saturation Voltage
(IC = 100 mAdc, Ib = 2.5 mAdc)
(IC = 10 mAdc, IB = 0.25 mA)
Base-Emitter Saturation Voltage
(IC = 10 mA, Ib = 0.25 mA)
(IC = 100 mA, Ib = 2.5 mA)
Base-Emitter on Voltage
(IC = 2 mAdc, VcE = 5 Vdc)
VcE(sat)
all
VBE(sat)
all
VBE(on)
all
Min
32
45
5
30
40
100
120
180
250
380
80
120
160
240
40
45
60
60
0.15
0.05
0.6
0.75
0.60
Typ
0.2
0.2
0.2
0.5
145
220
300
170
250
350
500
190
260
380
550
0.30
0.12
0.70
0.90
0.62
Max
100
100
20
20
10
10
20
220
310
460
630
400
630
1000
0.80
0.25
0.85
1.2
0.75
Unit
Vdc
Vdc
nA
LiAdc
LiAdc
nA
Vdc
Vdc
Vdc
4-217


BCY79 데이터시트, 핀배열, 회로
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
Characteristic
f Type
Symbol
DYNAMIC CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS
Min
Current Gain-Bandwidth Product
(IC = 10 mAdc, Vce = 5 V, f = 100 MHz)
Output Capacitance
(Vce = 10 Vdc, C| = 0, f = 1 MHz)
all
all
fT
180
Cob
Input Capacitance
(V B e = 0.5 V, CI = 0, f = 1 MHz)
all Cib
Small Signal Current Gain
(IC = 2 mAdc, Vce = 5 Vdc, f = 1 kHz)
BCY78-VII, BCY79-VII
BCY78-VIII, BCY79-VIII
BCY78-IX, BCY79-IX
BCY78-X, BCY79-X
hfe
(h21e)
Input Impedance
(IC = 2 mAdc, Vce = 5 Vdc, f = 1 kHz)
Voltage Feedback Ratio
dC = 2 mAdc, Vce = 5 Vdc, f = 1 kHz)
BCY78-VII, BCY79-VII
BCY78-VIII, BCY79-VIII
BCY78-IX, BCY79-IX
BCY78-X, BCY79-X
BCY78-VII, BCY79-VII
BCY78-VIII, BCY79-VIII
BCY78-IX, BCY79-IX
BCY78-X, BCY79-X
hie
(hue)
hre
(hl2e)
1.6
2.5
3.2
7.5
Noise Figure
(IC = 0.2 mAdc, Vce = 5 Vdc,
RS = 2 Kohms, f = 1 kHz)
NF
all
SWITCHING CHARACTERISTICS
IC = 10 mA, lB1 = 1 mA, Ib2 = 1 mA
Vbb = 3.6 V, Ri = R 2 = 5 KQ
RL = 990 ohms
td
tr
ton
* See test circuit.
IC = 100 mA, IB1 = 10 mA, Ib2 = 10 mA
VBB = 5 V, Ri = 500 0, R2 = 700 Q
RL = 98 ohms
ts
tf
toff
td
tr
ton
* See test circuit.
ts
tf
toff
Typ
300
3.5
8
200
260
330
520
1.5
2
2
3
2
35
50
85
400
80
480
5
50
55
250
200
450
Max
7
15
Unit
MHz
pF
pF
Kohms
4.5
6
8.5
12
X10"
dB
6
nS
150
800
nS
150
800
4-218




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제조업체: Motorola Semiconductors

( motorola )

BCY79 transistor

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