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BFY81 반도체 회로 부품 판매점

SILICON DUAL MATCHED NPN TRANSISTORS



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BFY81 데이터시트, 핀배열, 회로
SILICON DUAL MATCHED
NPN TRANSISTORS
BFY81
Dual Silicon Matched Planar Transistors
Hermetic TO-77 (MO-002AF) Metal Package.
Ideally Suited For Differential And Low Level Dc Amplifiers
Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO Collector – Base Voltage
45V
VCEO Collector – Emitter Voltage
45V
VEBO Emitter – Base Voltage
6V
IC Continuous Collector Current
50mA
PD Total Power Dissipation at TA = 25°C
One Side
400mW
Both Sides
500mW
Derate Above 25°C 2.3mW/°C
2.9mW/°C
PD Total Power Dissipation at TC = 25°C
800mW
1.3W
Derate Above 25°C 4.6mW/°C
7.4mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
One Side Max.
437
219
Both Sides Max. Units
350 °C/W
135 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8502
Issue 1
Page 1 of 3


BFY81 데이터시트, 핀배열, 회로
SILICON DUAL MATCHED
NPN TRANSISTORS
BFY81
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Per Side
Symbols
Parameters
Test Conditions
Min.
V(BR)CBO
V(BR)CEO(1)
V(BR)EBO
ICBO
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
IC = 10µA
IC = 10mA
IE = 10µA
VCB = 40V
IE = 0
IB = 0
IC = 0
IE = 0
TA = 150°C
45
45
6
IEBO
Emitter-Cut-Off Current VEB = 5V
IC = 0
ICEO
VCE(sat)(1)
VBE(on)
Collector-Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter On Voltage
VCE = 5V
IC = 1.0mA
IC = 100µA
IB = 0
IB = 0.1mA
VCE = 5V
hFE(1)
Forward-current transfer
ratio
IC = 10µA
IC = 100µA
IC = 1.0mA
VCE = 5V
VCE = 5V
VCE = 5V
60
100
150
Typ.
Max.
10
10
10
10
0.35
0.7
Units
V
nA
µA
nA
V
ELECTRICAL MATCHING CHARACTERISTICS
hFE1 (2)
hFE2
|VBE1-VBE2|
|(VBE1-VBE2)TA|(3)
Forward-current transfer
ratio (gain ratio)
Base-Emitter Voltage
Differential
Base-Emitter Voltage
Differential Change Due
To Temperature
IC = 100µA
IC = 100µA
IC = 100µA
VCE = 5V
VCE = 5V
VCE = 5V
0.8
1.0
10 mV
25 µV/°C
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-
current transfer ratio
Cobo
Output Capacitance
NF(3) Noise Figure
Notes
(1) Pulse Width 300us, δ ≤ 2%
(2) The lower of the two readings is taken as hFE1
(3) By design only, not a production test
IC = 500µA
f = 30MHz
VCB = 5V
f = 1.0MHz
IC = 10µA
f = 1.0KHz
VCE = 5V
IE = 0
VCE = 5V
2
6 pF
4 dB
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8502
Issue 1
Page 2 of 3




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