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PDF BFR92S Data sheet ( Hoja de datos )
| Número de pieza | BFR92S | |
| Descripción | RF TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BFR92,S
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Colfector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
vCBO
v EBO
"C
THERMAL CHARACTERISTICS
Characteristic
'Total Device Dissipation, T/\ = 25°C
Derate above 25"C
Symbol
PD
Storage Temperature
T stg
'Thermal Resistance Junction to Ambient
R 0JA
mmPackage mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown VoltageO)
dc = 10 mA)
Collector-Base Breakdown Voltage
dC = 10 tiA)
Emitter-Base Breakdown Voltage
=(IE 100 uA)
Collector Cutoff Current
(VC E = 10 V)
Collector Cutoff Current
(VC B = 10 V)
Emitter Cutoff Current
(VEB = 1.0 V)
ON CHARACTERISTICS
DC Current Gain
dC = 500 *iA, VC e = 10 V)
dC = 3.0 mA, VC e = 1.5 V)
dC = 14 mA, VCe = 10 VHP
Collector-Emitter Saturation VoltageO)
dC = 25 mA, Ib = 5.0 mA)
BFR92S
Base-Emitter Saturation Voltaged)
dC = 25 mA, Ib = 5.0 mA)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 14 mA, Vce = 10 V, f = 500 MHz)
Noise Figure
(VCE = 1-5 V, lc = 3.0 mA, Rs
50 n, f = 30 MHz)
BFR92S
(1) Pulse Width « 300 fis, Duty Cycle =s 2.0%.
Symbol
v(BR)CEO
v (BR)CBO
v (BR)EBO
'CEO
'CBO
'EBO
v CE(sat)
v BE(sat)
fT
IMF
Min
2.0
25
30
25
4.5
Value
15
20
2.0
25
Max
350
2.8
150
357
Max
50
50
10
100
0.5
1.2
3.0
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
Vdc
Vdc
nA
nA
Vdc
Vdc
MHz
3-34
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BFR92S.PDF ] | |
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