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Kexin |
SMD Type
TransistIoCrs
PNP General Purpose Transistors
BCX71H/J/K
Features
Low current (max. 100 mA).
Low voltage (max. 45 V).
Low noise.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Peak collector current
ICM
Peak base current
IBM
Total power dissipation
Ptot
Storage temperature
Tstg
Junction temperature
Tj
Operating ambient temperature
Ramb
Thermal resistance from junction to ambient *
Rth j-a
* Transistor mounted on an FR4 printed-circuit board.
Rating
-45
-45
-5
-100
-200
-200
250
-65 to +150
150
-65 to +150
500
Unit
V
V
V
mA
mA
mA
mW
K/W
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
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SMD Type
TransistIoCrs
BCX71H/J/K
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector-emitter saturation voltage
Base to emitter saturation voltage
Base to emitter voltage
Collector capacitance
Emitter capacitance
Transition frequency
Noise figure
Symbol
Testconditons
ICBO IE = 0; VCB = -45 V
ICBO IE = 0; VCB = -45 V; Tamb = 150
IEBO IC = 0; VEB = -4 V
BCX71H
BCX71J hFE IC = -10 ìA; VCE = -5 V
BCX71K
BCX71H
BCX71J hFE IC = -2 mA; VCE = -5 V
BCX71K
BCX71H
BCX71J hFE IC = -50 mA; VCE = -1 V; *
BCX71K
IC = -10 mA; IB = -0.25 mA
VCE(sat)
IC = -50 mA; IB = -1.25 mA; *
IC = -10 mA; IB = -0.25 mA
VBE(sat)
IC = -50 mA; IB = -1.25 mA; *
VBE IC = -2 mA; VCE = -5 V
CC IE = Ie = 0; VCB = -10 V; f = 1 MHz
Ce IC = Ic = 0; VEB = -0.5 V; f = 1 MHz
fT IC = -10 mA; VCE = -5 V; f = 100 MHz
NF
IC = -200 ìA; VCE = -5 V; RS = 2 kÙ;f =
1 kHz; B = 200 Hz
Min Typ Max Unit
-20 nA
-20 ìA
-20 nA
30
40
100
180 310
250 460
380 630
80
100
110
-60 -250 mV
-120
-550 mV
-600
-850 mV
-680
-1050 mV
-600 -650 -750 mV
4.5 pF
11 pF
100 MHz
2 6 dB
* Pulse test: tp 300 ìs; d 0.02.
hFE Classification
TYPE
Marking
BCX71H
BH
BCX71J
BJ
BCX71K
BK
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