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BCX71J 반도체 회로 부품 판매점

SILICON PLANAR EPITAXIAL TRANSISTORS



CDIL 로고
CDIL
BCX71J 데이터시트, 핀배열, 회로
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCX71G BCX71H
BCX71J BCX71K
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P silicon transistors
Marking
BCX71G = BG
BCX71H = BH
BCX71J = BJ
BCX71K = BK
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (d.c.)
Total power dissipation
Junction temperature
Transition frequency at f = 100 MHz
–VCE = 5 V; –IC = 10 mA
Noise figure at f = 1 kHz
–VCE = 5V; –IC = 200mA
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
–VCES
–VCE0
–IC
Ptot
Tj
max.
max.
max.
max.
max.
45 V
45 V
200 mA
250 mW
150 ° C
fT typ. 180 MHz
F typ. 2 dB
–VCES
–VCE0
–VEB0
max.
max.
max.
45 V
45 V
5V
Continental Device India Limited
Data Sheet
Page 1 of 3


BCX71J 데이터시트, 핀배열, 회로
BCX71G BCX71H
BCX71J BCX71K
Collector current (d.c.)
Base current
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Collector–emitter cut–off current
VEB = 0; –VCE = 45 V
VEB = 0; –VCE = 45 V; Tamb = 150 °C
Emitter–base cut–off current
IC = 0; –VEB = 4 V
Saturation voltages
–IC = 10 mA; –IB = 0,25 mA
–IC = 50 mA; –lB = 1,25 mA
Transition frequency at f = 100 MHz ·
–VCE = 5 V; –IC = 10 mA
Capacitance at f = 1 MHz
–VCB = 10 V; IE = Ie = 0
Emitter capacitance at f = 1 MHz
–VEB = 0,5 V; IC = Ic = 0
Noise figure at RS = 2 kW
–VCE = 5 V; –IC = 200 mA; B = 200 Hz
D.C. current gain
–VCE = 5 V; –IC = 10mA
–VCE = 5 V; –IC = 2 mA
hFE
hFE
–VCE = 1 V; –IC = 50 mA
Small-signal current gain
hFE
–VCE = 5 V; –IC = 2 mA; f = 1 kHz hfe
Output admittance
–VCE = 5 V; –IC = 2 mA; f = 1 kHz hoe
Base-emitter voltage
–VCE = 5 V; –IC = 2 mA
VBE
–VCE = 5 V; –IC = 10 mA
–VCE = 1 V; –IC = 50 mA
VBE
VBE
–I C max. 200 mA
–lB max. 50 mA
Ptot max. 250 mW
Tstg –55 to +150 °C
Tj max. 150 ° C
Rth j–a =
500 K/W
–ICES
–ICES
<
<
20 nA
20 mA
–IEB0 <
20 nA
–VCEsat 0,06 to 0,25 V
–VBEsat 0,6 to 0,85 V
–VCEsat 0,12 to 0,55 V
–VBEsat 0,68 to 1,05 V
fT typ. 180 MHz
Cc typ. 4,5 pF
Ce typ. 11 pF
F typ. 2 dB
< 6 dB
BCX71G 71H 71J 71K
> – 30 40 100
> 120 180 250 380
< 220 310 460 630
> 60 80 100 110
> 125 175 250 350
< 250 350 500 700
typ. 18 24 30 50 mS
0,6 to 0.75 V
typ. 0,65 V
typ. 0,55 V
typ. 0,72 V
Continental Device India Limited
Data Sheet
Page 2 of 3




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