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BCY71 반도체 회로 부품 판매점

TRANSISTOR



Motorola Semiconductors 로고
Motorola Semiconductors
BCY71 데이터시트, 핀배열, 회로
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Tc = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
ic
PD
BCY BCY BCY
70 71 72
40 45 25
50 45 25
5
0.2
360
2.06
pd 0.6
4.0
Tj. Tgtg -65 to +200
Unit
Vdc
Vdc
Vdc
Amp
mWatt
mW/°C
mWatt
mW/°C
°C
Symbol
Rfiijc
Max
175
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
Symbol
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(lr = 2 mA, Ib = 0)
BCY70
BCY71
BCY72
V(BR)CE0
Collector Base Leakage Current
dE = 0, VcB = 50 V)
(IE = 0, VCB = 45 V)
dE = 0, VCB = 25 V)
dE = 0, V C B = 40 V, TA mb = 100°C)
dE = 0, V C B = 40 V, TA mb = 100°C)
dE = 0, V C B = 20 V, TA mb = 100°C)
dE = 0, VcB = 40 V)
dE = 0, VcB = 40 V)
dE = 0, VcB = 20 V)
Emitter Base Leakage Current
(VEB = 5 V, Ic = 0)
(VEB = 4 V, Ic = 0)
(V E B = 4 V, Cl = 0, T A mb = 100°C)
Collector Emitter Leakage Current
(VCE = 50 V, Vbe = 3 V)
ON CHARACTERISTICS
DC Current Gain
(VCE = 1 V, Ic = 10 uA)
(VcE = 1 V, Ic = 100 nA)
BCY70
BCY71
BCY72
BCY70
BCY71
BCY72
BCY70
BCY71
BCY72
BCY70
BCY71
BCY70
BCY71
ICBO
lEBO
ICEX
HFE
(VCE = 1 V, Ic = 1 mA)
BCY70
BCY71
BCY72
(VCE = 1 V, Ic = 10 mA)
BCY70
BCY71
BCY72
(VcE = 1 V, Ic = 50 mA)
Base Emitter Saturation Voltage
C(l = 50 mA, Ib = 5 mA)
dc = 10 mA, Ib = 1 mA)
Collector Emitter Saturation Voltage
(lC = 50 mA, Ib = 5 mA)
(lC = 10 mA, Ib = 1 mA)
BCY70
BCY70/71
BCY70/71
VBE(sat)
VcE(sat)
BCY70
BCY71
BCY72
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
TRANSISTOR
PNP SILICON
Refer to 2N3798 for graphs.
Min Typ
40
45
25
Unit
Vdc
0.5 HA
0.5
0.5
2
2
2
10 nA
50
50
0.5
liA
10 nA
2 HA
nA
20
40
40
80
45
90
40
50
100 600
50
15
V
1.2
0.6 0.9
0.50
0.25
V
4-215


BCY71 데이터시트, 핀배열, 회로
BCY70, BCY71, BCY72
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
Characteristic
DYNAMIC CHARACTERISTICS
Symbol
Min
Transition Frequency
(IC = 10 mA,f = 100 MHz, Vce = 20 V) All types
dC = 1 00 HA, f = 1 0.7 MHz, Vqe = 20 V) BCY7 1 only
Noise Figure
(Vce = 5 V, lc = 100 uA, Rg
2 KQ, 30 to 15 kHz at - 3 dB points)
BCY70/72
BCY71
250
15
NF
Switching Times
(IC = 10 mA, Ibi = (B2
1 mA)
h parameters
(Vce = 10 V, lc = 1 mA, f
1 kHz)
Common Base Output Capacitance
(VCB = 10 V, IE = 0, f = 1 MHz)
BCY70/72
BCY70/72
BCY70/72
BCY70/72
BCY70/72
BCY70/72
BCY71
ton
toff
td
tr
ts
tf
h 12e
h 21e
h 22e
hlle
Cob
100
10
2
Input Capacitance
(VBE = i v, ic = o. f
1 MHz
Cib
Typ
Max
Unit
MHz
dB
65
420
35
35
350
80
20X10"
400
60
12
us
KQ
pF
pF
4-216




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제조업체: Motorola Semiconductors

( motorola )

BCY71 transistor

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