|
Comset Semiconductor |
NPN BCY58 – BCY59
SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the
collector connected to the case .
They are designed for use in audio drive and low-noise input stages.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCES
VEBO
IC
IB
PD
PD
TJ
TStg
Collector-Emitter Voltage(1)
Collector-Emitter Voltage (VBE =0)
Emitter-Base Voltage
Collector Current
Base Current
Total Power
Dissipation
Total Power
Dissipation
@ Tamb = 45°
@ Tcase= 45°
Junction Temperature
Storage Temperature range
(1) Applicable up to IC = 500mA
THERMAL CHARACTERISTICS
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
45
32
45
32
7
7
200
50
0.39
1
200
-65 to +150
Unit
V
V
V
mA
mA
mW
Watts
°C
°C
Value
450
150
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/4
NPN BCY58 – BCY59
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specifie
Symbol
Ratings
Test Condition(s)
ICES
ICES
IEBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
VBE
Collector Cutoff
VCB =45 V
VBE =0V
BCY59
Current
VCB =32 V
VB =0V
BCY58
Collector Cutoff
VCB =45 V
VBE =0V,Tamb =150°C
BCY59
Current
VCB =32 V, VBE =0
Tamb =150°C
BCY58
Emitter Cutoff
Current
VBE =5.0 VIC =0
BCY59
BCY58
Collector Emitter
Breakdown Voltage
IC =2 mA, IB =0
BCY59
BCY58
Emitter Base
Breakdown Voltage
IE =1µA, IC =0
BCY59
BCY58
IC =10 mA
BCY59
Collector-Emitter
IB =0.25 mA
BCY58
saturation Voltage IC =100 mA
BCY59
IB =2.5 mA
BCY58
Base-Emitter
IC =10 mA
IB =0.25 mA
BCY59
BCY58
Saturation Voltage IC =100 mA
BCY59
IB =2.5 mA
BCY58
IC =10 µA, VCE =5 V
BCY59
BCY58
VCE =VCE max
BCY59
IC =20 µA, Tj =100°C BCY58
Base-Emitter Voltage IC =2 mA, VCE =5 V
BCY59
BCY58
IC =10 mA, VCE =1 V
BCY59
BCY58
IC =100 mA, VCE =1 V
BCY59
BCY58
Min Typ Max Unit
- - 10 nA
- - 10 µA
- - 10 nA
45 -
32 -
-
-
V
7- -V
- 0.12 0.25
- 04 08
V
0.6 0.7 0.85
0.7 0.85 1.2
- 0.5 -
0.2 -
-
0.55 - 0.7 V
- 0.7 -
- 0.76 -
Symbol
Ratings
hFE DC Current Gain
hfe
Small-Signal
Current Gain
01/05/2016
Test
Condition(s)
IC =10 µA, VCE =5 V
IC =2 mA, VCE =5 V
IC =10 mA, VCE =1 V
IC =100 mA, VCE =1V
IC =2 mA, VCE =5 V,
f = 1kHz
BCY59VII
BCY58VII
-
Typ.20
>120
<220
>80
-
>40
>125
<250
COMSET SEMICONDUCTORS
BCY59VIII
BCY58VIII
>20
Typ.95
>180
<310
>120
<400
>45
>175
<350
BCY59IX
BCY58IX
>40
Typ.190
>250
<460
>160
<630
>60
>250
<500
BCY59X
BCY58X
>60
Typ.300
>380
<630
>240
<1000
>60
>350
<700
2/4
|