파트넘버.co.kr BCY59 데이터시트 PDF


BCY59 반도체 회로 부품 판매점

SILICON PLANAR EPITAXIAL TRANSISTORS



Comset Semiconductor 로고
Comset Semiconductor
BCY59 데이터시트, 핀배열, 회로
NPN BCY58 BCY59
SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the
collector connected to the case .
They are designed for use in audio drive and low-noise input stages.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCES
VEBO
IC
IB
PD
PD
TJ
TStg
Collector-Emitter Voltage(1)
Collector-Emitter Voltage (VBE =0)
Emitter-Base Voltage
Collector Current
Base Current
Total Power
Dissipation
Total Power
Dissipation
@ Tamb = 45°
@ Tcase= 45°
Junction Temperature
Storage Temperature range
(1) Applicable up to IC = 500mA
THERMAL CHARACTERISTICS
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
45
32
45
32
7
7
200
50
0.39
1
200
-65 to +150
Unit
V
V
V
mA
mA
mW
Watts
°C
°C
Value
450
150
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/4


BCY59 데이터시트, 핀배열, 회로
NPN BCY58 BCY59
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specifie
Symbol
Ratings
Test Condition(s)
ICES
ICES
IEBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
VBE
Collector Cutoff
VCB =45 V
VBE =0V
BCY59
Current
VCB =32 V
VB =0V
BCY58
Collector Cutoff
VCB =45 V
VBE =0V,Tamb =150°C
BCY59
Current
VCB =32 V, VBE =0
Tamb =150°C
BCY58
Emitter Cutoff
Current
VBE =5.0 VIC =0
BCY59
BCY58
Collector Emitter
Breakdown Voltage
IC =2 mA, IB =0
BCY59
BCY58
Emitter Base
Breakdown Voltage
IE =1µA, IC =0
BCY59
BCY58
IC =10 mA
BCY59
Collector-Emitter
IB =0.25 mA
BCY58
saturation Voltage IC =100 mA
BCY59
IB =2.5 mA
BCY58
Base-Emitter
IC =10 mA
IB =0.25 mA
BCY59
BCY58
Saturation Voltage IC =100 mA
BCY59
IB =2.5 mA
BCY58
IC =10 µA, VCE =5 V
BCY59
BCY58
VCE =VCE max
BCY59
IC =20 µA, Tj =100°C BCY58
Base-Emitter Voltage IC =2 mA, VCE =5 V
BCY59
BCY58
IC =10 mA, VCE =1 V
BCY59
BCY58
IC =100 mA, VCE =1 V
BCY59
BCY58
Min Typ Max Unit
- - 10 nA
- - 10 µA
- - 10 nA
45 -
32 -
-
-
V
7- -V
- 0.12 0.25
- 04 08
V
0.6 0.7 0.85
0.7 0.85 1.2
- 0.5 -
0.2 -
-
0.55 - 0.7 V
- 0.7 -
- 0.76 -
Symbol
Ratings
hFE DC Current Gain
hfe
Small-Signal
Current Gain
01/05/2016
Test
Condition(s)
IC =10 µA, VCE =5 V
IC =2 mA, VCE =5 V
IC =10 mA, VCE =1 V
IC =100 mA, VCE =1V
IC =2 mA, VCE =5 V,
f = 1kHz
BCY59VII
BCY58VII
-
Typ.20
>120
<220
>80
-
>40
>125
<250
COMSET SEMICONDUCTORS
BCY59VIII
BCY58VIII
>20
Typ.95
>180
<310
>120
<400
>45
>175
<350
BCY59IX
BCY58IX
>40
Typ.190
>250
<460
>160
<630
>60
>250
<500
BCY59X
BCY58X
>60
Typ.300
>380
<630
>240
<1000
>60
>350
<700
2/4




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제조업체: Comset Semiconductor

( comset )

BCY59 transistor

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