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TRANSISTOR



Motorola Semiconductors 로고
Motorola Semiconductors
BCY59 데이터시트, 핀배열, 회로
BCY58
BCY59
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 10 Ohms)
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Tc = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCES
BCY BCY
58 59
32 45
32 45
VEBO
ic
PD
pd
7
0.2
0.6
2.28
1
6.67
Tj. T stg -65 to +200
Symbol
Rfljc
R#ja
Max
150
450
Unit
Vdc
Vdc
Vdc
Amp
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Type
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, Ic = 0)
BCY58
BCY59
V(BR)CEO
Emitter-Base Breakdown Voltage
(IE = 1nAdc, Ic = 0)
all V(BR)EB0
Collector Cutoff Current
(V C E = 32 V)
(V C E = 45 V)
(VC E = 32 V, TA = 100°C, V B E = 0.2 V)
(VcE = 45 V, Ta = 100°C, Vbe = 0.2 V)
(V C E = 32 V, T A = 150°)
(VcE = 45 V, Ta = 150°)
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
ices
icex
ices
Emitter Base Cutoff Current
(V E B = 5 V)
ON CHARACTERISTICS
all iebo
DC Current Gain
dC = 10 uAdc, Vce = 5 Vdc)
(IC = 2 mAdc, Vce = 5 Vdc)
(IC = 10 mAdc, Vce = 1 Vdc)
(IC = 100 mAdc, Vce = 1 Vdc)
BCY59-VII, BCY58-VII
BCY59-VIII, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
BCY59-VII, BCY58-VII
BCY59-VIII, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
BCY59-VII, BCY58-VII
BCY59-VII1, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
BCY59-VII, BCY58-VII
BCY59-VIII, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
hFE
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, Ib = 2.5 mAdc)
(IC = 10 mAdc, Ib = 0.25 mA)
Base-Emitter Saturation Voltage
dC = 10 mA, Ib = 0.25 mA)
(IC = 100 mA, Ib = 2.5 mA)
Base-Emitter on Voltage
(IC = 2 mAdc, VcE = 5 Vdc)
VCE(sat)
all
VBE(sat)
all
VBE(on)
all
Min
32
45
7
20
40
100
120
180
250
380
80
120
160
240
40
45
60
60
0.15
0.05
0.6
0.75
0.55
Typ
0.2
0.2
0.2
0.5
145
220
300
170
250
350
500
190
260
380
550
0.30
0.12
0.70
0.90
0.62
10
10
20
20
10
10
10
220
310
460
630
400
630
1000
0.70
0.35
0.85
1.2
0.70
Vdc
Vdc
nAdc
LiAdc
uAdc
nAdc
Vdc
Vdc
Vdc
4-210


BCY59 데이터시트, 핀배열, 회로
BCY58, BCY59
~~~~ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.)
Characteristic
Type
I Symbol I Min
DYNAMIC CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
dC = 10 mAdc, Vce = 5 V, f = 100 MHz)
Output Capacitance
(Vce = 10 vdc, ic = o. f = 1 mhz)
Input Capacitance
(Vbe = 0.5 V, Ic = 0, f = 1 MHz)
Small Signal Current Gain
dC = 2 mAdc, Vce = 5 Vdc, f = 1 kHz)
all
all
all
BCY58-VII, BCY59-VII
BCY58-VIM, BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
fT
Cob
Cib
hfe
(h21e)
125
125
175
250
350
Output Admittance
dC = 2 mAdc, Vce = 5 Vdc, f = 1 kHz)
BCY58-VII, BCY59-VII
BCY58-VIII, BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
hoe
(h 2 2e)
Input Impedance
dC = 2 mAdc, Vce = 5 Vdc, f = 1 kHz)
BCY58-VII, BCY59-VII
BCY58-VIII, BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
hie
(hue)
1.6
2.5
3.2
4.5
Voltage Feedback Ratio
dC = 2 mAdc, Vce = 5 Vdc, f = kHz)
Noise Figure
(IC = 0.2 mAdc, Vce = 5 Vdc,
RS = 2 Kohms; f = 1 kHz)
SWITCHING CHARACTERISTICS
™AtC = 10 mA, lB1 = 1 rnA, Ifi2 = 1
Vb"B = 3.6 V, Ri = R2 = 5 KQ
R(_ =? 990 ohms
BCY58-VII, BCY59-VII
BCY58-VIII, BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
all
hre
(hi2e)
Nf
td
tr
ton
* See test circuit.
IC = 100 mA, lB1 = 10 mA, lB2 = mA
Vbb = 5 V, Ri = 500 Q, R2 = 700 Q
RL = 98 ohms
ts
tf
toff
td
tr
ton
* See test circuit.
ts
tf
toff
Typ
Max
|
|
Unit |
MHz
200
PF
3.5 6
pF
8 15
200
260
330
520
1.5
2
2
3
2
250
350
500
700
30
50
60
100
4.5
6
8.5
12
fimhos
Kohms
X10"
dB
6
35
50
85 150
400
80
480 800
5
50
55 150
250
200
450 800
nS
nS
4-211




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BCY59 transistor

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