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PDF BFX15 Data sheet ( Hoja de datos )
| Número de pieza | BFX15 | |
| Descripción | DUAL AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BFX15
CASE 645-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO
VCBO
VEBO
ic
PD
40 Vdc
j
80 Vdc
5 Vdc
200 mAdcj
One Die Both Die
500 600 mW
mW/°t
pd 1.2 1.8 Watt$
mW/°<p
Tj. T stg -65 to +200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage(1)
Collector Cutoff Current
(Ic = 30 mAdc, Ib - 0)
(IC = 100 nAdc, Ie = 0)
(IE = 100 uAdc, Ic = 0)
(IC
=
100
mAdc,
RBE
=
10
Q
)
(VCB = 40 Vdc, Ie = 0)
(VcB = 40 Vdc, Ie = 0. Ta 150°C)
Emitter Cutoff Current
(VeB = 4.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain (Ic = 10 uAdc, VcE = 5 Vdc)
C(I = 0.1 mAdc, Vce = 5.0 Vdc)
(IC = 10 mAdc, VcE = 5.0 Vdc)
Collector-Emitter Saturation Voltage
(Ic = 1 mAdc, Ib - Q-1 mAdc)
Base-Emitter Saturation Voltage
(Ic = 1 mAdc, Ib = 0-1 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (Ic = 50 mAdc, VCE = 10 Vdc. f = 20 MHz)
Output Capacitance
Input Capacitance
Small-Signal Current Gain
(VCB = 10 Vdc, Ie = 0. f = 1 kHz)
(VeB
=
0-5
Vdc,
Ic
=
O.f
=
1
kHz
>
(Ic = 1 mAdc, VcE = 5.0 Vdc, f - 1 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio (2)
Base-Emitter Voltage Differential
IC = 0.1 mAdc, VCE = 5.0 Vdc)
(Ig. = 100 "Adc, VcE = 5.0 Vdc)
Base-Emitter Voltage Differential Gradient
(IC = 100 uAdc, VCE = 5.0 Vdc, Ta = - 55 °C to + 125 °C)
(IC1 + IC2 = 200 ^Adc, Ta = 0°C to +70°C)
(1) Pulse Test: Pulse Width < 300 \xs, Duty Cycle < 2.0%.
(2) Lowest hpE reading is taken as hpE1 for this ratio.
Symbol
Min
VCEO(sus)
V(BR)CBO
V(BR)EB0
VCER(sus)
ICBO
lEBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
CTE
hFE
80
5.0
60
30
60
90
50
30
hFEl/f>FE2
VBE1-VBE2I
A(V B E1-VBE2)
AT A
Max
10
10
Unit
Vdc
Vdc
Vdc
nAdc
^Adc
nAdc
1.0 Vdc
0.6
MHz
15 pF
85 pF
5.0 mVdc
10 \xV/°C\
2.5
5-36
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BFX15.PDF ] | |
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