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BCX70J 반도체 회로 부품 판매점

NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR



Zetex Semiconductors 로고
Zetex Semiconductors
BCX70J 데이터시트, 핀배열, 회로
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 – FEBRUARY 95
PARTMARKING DETAIL –
COMPLEMENTARY TYPE –
BCX70G – AG
BCX70H – AH
BCX70J – AJ
BCX70K – AK
BCX70GR – AW
BCX70HR – 9P
BCX70JR – AX
BCX70KR – P9
BCX71
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCES
VCEO
VEBO
IC
IB
PTOT
tj:tstg
BCX70
E
C
B
VALUE
45
45
5
200
50
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFEGroup G
hFEGroup H
hFE Group J
hFEGroup K
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 k
h12e 1.5
2
2
3 10-4
h21e 200 260 330 520
h22e 18 30
24 50
30 60
50 100 µS
SWITCHING CIRCUIT
-VBB VCC(+10V)
1µsec
+10V
tr < 5nsec
Mark/Space ratio < 0.01
Zs=50
R1
50
R2
RL
tr < 5nsec
Zin 100k
Oscilloscope
PAGE NO


BCX70J 데이터시트, 핀배열, 회로
BCX70
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cut-off Current
V(BR)CEO
V(BR)EBO
ICES
45
5
20
20
Emitter-Base Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base - Emitter Voltage
Static Forward Current
Transfer Ratio
BCX70G
BCX70H
BCX70J
BCX70K
Transition Frequency
Emitter-Base Capacitance
Collector-Base Capacitance
Noise Figure
IEBO
VCE(sat)
VBE(SAT)
VBE
hFE
hFE
hFE
hFE
fT
Cebo
Ccbo
N
20
0.12 0.35
0.20 0.55
0.60 0.70 0.85
0.70 0.83 1.05
0.52
0.55 0.65 0.75
0.78
78
120 170 220
50
20 145
180 250 310
70
40 220
250 350 460
90
100 300
380 500 630
100
125 250
8
4.5
26
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td 35
tr 50
ton 85 150
ts 400
tf 80
toff 480 800
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
V
V
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
ns
ns
IC=2mA
IEBO=1µA
VCES =45V
VCES =45V,
Tamb=150oC
VEBO=4V
IC=10mA,IB= 0.25mA
IC= 50mA, IB=1.25mA
IC=10mA,IB=0.25mA,
IC=50mA, IB=1.25mA
IC=10µA, VCE=5V
IC=2mA, VCE=5V
IC=50mA, VCE =1V
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
IC =10mA, VCE =5V
f = 100MHz
VEBO=0.5V, f =1MHz
VCBO=10V, f =1MHz
IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
f=200Hz
IC:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5K
VBB =3.6V, RL=990




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