파트넘버.co.kr BCX70H 데이터시트 PDF


BCX70H 반도체 회로 부품 판매점

NPN Small Signal Transistor



MCC 로고
MCC
BCX70H 데이터시트, 핀배열, 회로
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
Ideally Suited for Automatic Insertion
150oC Junction Temperature
Low Current, Low Voltage
For Switching and AF Amplifier applications.
Suited for low level, low noise, low frequency
Applications in hybrid circuits
Mechanical Data
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams ( approx.)
Marking :
MCC P/N Marking MCC P/N Marking
BCX70G AG BCX70J
AJ
BCX70H AH BCX70K AK
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Symbol Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO 45 V
VCBO 45 V
VEBO 5 V
Collector Current(DC)
Base Current(DC)
Power Dissipation@Ts=79oC
Thermal Resistance, Junction to
Ambient Air
Operating & Storage Temperature
IC 200 mA
IB 50 mA
Pd 250 mW
RθJA
500(1) oC/W
Tj, TSTG -55~150 oC
Notes:
(1) Mounted on FR-4 printed-circuit board
BCX70G
THRU
BCX70K
NPN Small
Signal Transistor
250mW
SOT-23
A
D
C
CB
FE
BE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: 4
www.mccsemi.com
1 of 3
2008/01/01


BCX70H 데이터시트, 핀배열, 회로
BCX70 Series
MCC
TM
Micro Commercial Components
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
DC Current Gain
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
hFE
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 2 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 50 mA
Collector-Emitter Saturation Voltage
VCEsat
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
Base-Emitter Saturation Voltage
VBEsat
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
Base-Emitter Voltage
VCE = 5 V, IC = 2 mA
VBE VCE = 5 V, IC = 10 µA
VCE = 1 V, IC = 50 mA
Collector Cut-off Current
ICBO
VCB = 45 V, VBE = 0 V
VCB = 45 V, VBE = 0 V
TA = 150°C
Emitter Cut-off Current
IEBO
VEB = 4 V, IC = 0
Gain-Bandwidth Product
fT
VCE = 5 V, IC = 10 mA
f = 100 MHz
Collector-Base Capacitance
CCBO VCB = 10 V, f = 1 MHz, IE = 0
Emitter-Base Capacitance
CEBO VEB = 0.5 V, f = 1 MHz, IC = 0
Noise Figure
VCE = 5 V, IC = 200 µA,
F RS = 2 k, f = 1 kHz,
B = 200 Hz
Small Signal Current Gain
BCX70G
BCX70H
BCX70J
BCX70K
hfe
VCE = 5 V, IC = 2 mA,
f = 1.0 kHZ
Turn-on Time at RL = 990(see fig. 1)
ton
VCC = 10 V, IC = 10 mA,
IB(on) = -IB(off) = 1 mA
Turn-off Time at RL = 990(see fig. 1)
toff
VCC = 10 V, IC = 10 mA,
IB(on) = -IB(off) = 1 mA
Min
30
40
100
120
180
250
380
50
70
90
100
50
100
600
700
550
100
Typ Max Unit
——
——
——
——
— 220
310
460
— 630
——
——
——
——
350
550
mV
850
1050
mV
650 750
520 — mV
780 —
— 20 nA
— 20 µA
— 20 nA
250 — MHz
2.5 — pF
8 — pF
2 6 dB
200
260
330
520
85 150
ns
480 800
ns
Revision: 4
www.mccsemi.com
2 of 3
2008/01/01




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BCX70H transistor

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