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PDF BCX69 Data sheet ( Hoja de datos )

Número de pieza BCX69
Descripción GENERAL PURPOSE TRANSISTOR
Fabricantes Motorola Semiconductors　
Logotipo Motorola Semiconductors Logotipo



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No Preview Available ! BCX69 Hoja de datos, Descripción, Manual

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
—Base Current Maximum
—Collector Current Continuous
—Collector Current Maximum
Symbol
VCEO
VCES
VEBO
<BM
'CM
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
Storage Temperature
'stg
•Thermal Resistance Junction to Ambient
Raja
•Package mounted on 99.5% alumina 10 x 12 x 0.6 mm.
Value
20
25
5.0
100
200
1.0
2.0
Max
1.0
8.0
150
125
Unit
mA
mA
Unit
Watt
mW/°C
°C
°C/W
BCX69
CASE 345-01, STYLE 1
SOT-89
GENERAL PURPOSE TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 10 mA)
Collector Cutoff Current
(VC B = 25 V)
Emitter Cutoff Current
<VEB = 5.0 V)
ON CHARACTERISTICS
DC Current Gain
(Vce = 10 V, lc = 5.0 mA)
5A(Vce = 1.0 V, lc = °- >
(Vce = lov, ic = i.o A)
Collector-Emitter Saturation Voltage
C(l = 1.0 A, Ib = 100 mA)
Base-Emitter On Voltage
(Vce = 10 V, lc = 5.0 mA)
(Vce = lov, ic = i.o a)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(Vce = 5.0 V, lc = 10 mA, f = 20 MHz)
Symbol
v (BR)CEO
tCBO
lEBO
Min
20
hFE
VCE(sat)
v BE(on)
50
85
60
65
Max
100
0.6
1.0
3Unit
nA
MA
MHz
3-25

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