BCX56 반도체 회로 부품 판매점
GENERAL PURPOSE TRANSISTOR
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 Motorola Semiconductors |
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current Continuous
Symbol
vCEO
VCER
vCBO
VEBO
IB
"C
BCX54
45
45
45
5.0
0.1
1.0
BCX55
60
60
60
5.0
0.1
1.0
BCX56
80
100
100
5.0
0.1
1.0
Unit
V
V
V
V
A
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Ta = 25°C
Derate above 25°C
Po
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
RejA
•Package mounted on 99.5% alumina 10 x 12 x 0.6 mm.
Max
1.0
.
8.0
150
125
Unit
Watt
mW/°C
°C
°C/W
BCX54
BCX55
BCX56
CASE 345-01, STYLE 1
SOT-89
GENERAL PURPOSE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 10 mA)
c(l = 10 mA)
c(l = 10 mA)
Collector-Base Breakdown Voltage
dC = 10 fiA
C<I = 10 mA)
dC = 10 nM
Emitter-Base Breakdown Voltage
E(l = 500 mA, Ib - 50 mA)
E(l = 10 mA)
(IE = 10 /xA)
Collector Cutoff Current
(V CB = 30 V)
(VC B = 30 V, Tj = 125°C)
Emitter Cutoff Current
(VEB = 3.0 V)
ON CHARACTERISTICS
BCX54
BCX55
BCX56
BCX54
BCX55
BCX56
BCX54
BCX55
BCX56
DC Current Gain
dC = 5.0 mA, Vce = 2.0 V)
(IC = 150 mA, Vce = 20V>
dC = 500 mA, Vce = 2.0 V)
Collector-Emitter Saturation Voltage
dC = 500 mA, Ib = 50 mA)
Base-Emitter On Voltage
dC = 500 mA, Vce = 2.0 V)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(Vce = 5.0 V, lc = 10 ™A, f = 35 MHz)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
45
60
80
45
60
100
5.0
5.0
5.0
lEBO
hFE
VCE(sat)
v BE(on)
25
40
25
50
Max
Unit
100 nA
10 MA
100 nA
250
0.5
1.0
MHz
3-23
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제조업체: Motorola Semiconductors
( motorola )
BCX56 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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