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PDF BCW70LT1 Data sheet ( Hoja de datos )
| Número de pieza | BCW70LT1 | |
| Descripción | PNP EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Yiguang Electronic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCW70LT1 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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SEMICONDUCTOR
BCW69/70LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
SURFACE MOUNT SMALL SIGNAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating Unit
Package:SOT-23
Collector-Base Voltage
Vcbo
-50
V
Collector-Emitter Voltage
Vceo
-45
V
Emitter-Base Voltage
Vebo
-5.0
V
Collector Current
Ic -100 mA
Peak Collector Current
Peak Emitter Current
Power Dissipation at TSB=50 (Note1)
Junction Temperature
ICM -200 mA
IEM -200 mA
PD 310 mW
Tj 150
PIN:
STYLE
123
Storage Temperature
Tstg -65-150
ELECTRICAL CHARACTERISTICS at Ta=25
NO.1
BEC
Characteristic
Symbol Min Typ Max Unit
Test Conditions
DC Current Gain Current Gain Group A
(Note2)
BCW69
Current Gain Group A
BCW70
Hfe 120 180 260
215 500
Vce=-5.0V Ic= -2.0mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Vce(sat)
Vbe(sat)
Vbe -600
-90
-250
-700
-900
-660
Collector-Emitter Cutoff Current
Ices -0.2
Gain Bandwidth Product
fT 150
Collector-Base Capacitance
Noise Figure
Ccbo
NF
2.0
Note1:Device mounted on ceramic substrate 0.7mm 2.5mm2 area.
Note2: Current gain subgroup “c” is not available for BC856.
DEVICE MARKING:
BCW69LT1=H1
BCW70LT1=H2
300 mV Ic= -10mA Ib= -0.5mA
650 Ic= -100mA Ib= -5.0mA
mV Ic= -10mA Ib= -0.5mA
Ic= -100mA Ib= -5.0mA
-750 mV Vce= -5.0V Ic= -2.0mA
-800 Vce= -5.0V Ic= -10mA
-15 nA Vce= -50V
-4.0 uA Vce= -50V,Tj=125
MHz Vce=-5V
f=100MHz
Ic=-10mA
6.0 pF Vcb= -10V f=1.0MHz
10 dB Vce=-5VIc=-200uA RG=2k
f=1MHz f=200MHz
1 page  
LESHAN RADIO COMPANY, LTD.
BCW69LT1 BCW70LT1
104
103
102
101
100
10–1
10–2
–4
V CC = 30 V
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the
I CEO model as shown in Figure 16. Using the model and the device
thermal response the normalized effective transient thermal resis-
I
CBO
AND
I CEX @ V BE(off) = 3.0 V
tance of Figure 14 was calculated for various duty cycles.
To find Z θJA(t) , multiply the value obtained from Figure 14 by the
steady state value R θJA .
Example:
Dissipating 2.0 watts peak under the following conditions:
t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading
of r(t) is 0.22.
–2 0 +20 +40 +60 +80 +100 +120 +140 +160
The peak rise in junction temperature is therefore
T J , JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
M13–6/6
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| PDF Descargar | [ Datasheet BCW70LT1.PDF ] | |
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