DataSheet.es    


PDF BCW67 Data sheet ( Hoja de datos )

Número de pieza BCW67
Descripción GENERAL PURPOSE TRANSISTOR
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de BCW67 (archivo pdf) en la parte inferior de esta página.


Total 1 Páginas

No Preview Available ! BCW67 Hoja de datos, Descripción, Manual

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
VCEO
VCBO
VEBO
•c
BCW67 BCW68
32 45
45 60
5.0
800
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device ADissipation, T = 25°C
Derate above 25°C
PD
Storage Temperature
T stg
•Thermal Resistance Junction to Ambient
RflJA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Max
350
2.8
150
357
Unit
mW
mW/°C
°C
°C/W
BCW67,A,B,C
BCW68,F,G
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
C(I = 10 mAdc, Ib = 0)
BGW67 Series
BCW68 Series
Collector-Emitter Breakdown Voltage
c(l = 10/xAdc, VE b = 0)
BCW67 Series
BCW68 Series
Emitter-Base Breakdown Voltage
E(l = 10 fiAdc, lc = 0)
Collector Cutoff Current
(Vqe = 32 Vdc, Ie = 0)
(Vce = 45 Vdc, Ig = 0)
(VcE = 32 Vdc, Ib = 0, TA = 150°C)
(VC E = 45 Vdc, Ib = 0. TA = 150°C)
Emitter Cutoff Current
(VE b = 4.0 Vdc, Ig = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 10 mAdc, Vce = 1-0 Vdc)
BCW67 Series
BCW68 Series
BCW67 Series
BCW68 Series
BCW67,A,68,F
BCW67B,68G
BCW67C
dC = 100 mAdc, Vce = 10 Vdc>
BCW67,A,68,F
BCW67B,68G
BCW67C
dC = 500 mAdc, Vce = 1-0 Vdc)
BCW67,A,68,F
BCW67B,68G
BCW67C
Collector-Emitter Saturation Voltage 0c = 100 mAdc, Bl = 10 mAdc)
Base-Emitter Saturation Voltage 0c = 500 mAdc, Ib = 50 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC
=
20 mAdc, Vce
=
vdc
-
f
=
10° MHz)
Output Capacitance
(Vcb
=
vdc
-
E[
=
°- f
=
1 MHz)
Input Capacitance
(Veb
=
0-5 Vdc, Ig
=
°- f
=
1
MHz
>
Noise Figure Oc = 0.2 mAdc, Vce = 5.0 Vdc, Rs = 10 kO,
BWf = 1.0 kHz,
= 200 Hz)
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
lEBO
"FE
VCE(sat)
VBE(sat)
C bo
Cjbo
NF
45
60
5.0
75
120
180
100
160
250
35
60
100
Typ
Max
Unit
Vdc
nAdc
jxAdc
nAdc
250
400
630
Vdc
Vdc
MHz
PF
PF
3-17

1 page





PáginasTotal 1 Páginas
PDF Descargar[ Datasheet BCW67.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BCW60NPN general purpose transistorsNXP Semiconductors
NXP Semiconductors
BCW60NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)Siemens Semiconductor Group
Siemens Semiconductor Group
BCW60NPN Silicon AF TransistorsInfineon Technologies AG
Infineon Technologies AG
BCW60Surface mount Si-Epitaxial PlanarTransistorsDiotec Semiconductor
Diotec Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar