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Diotec |
BCW60A ... BCW60D
BCW60A ... BCW60D
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-07-31
Power dissipation – Verlustleistung
2.9 ±0.1
0.4 3
Type
Code
1
2
1.1
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dim1e.9nsions - Maße [mm]
1=B 2=E 3=C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
VCEO
VCBO
VEB0
Ptot
IC
ICM
IBM
Tj
TS
Grenzwerte (TA = 25°C)
BCW60A ... BCW60D
32 V
32 V
5V
250 mW 1)
100 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 2 mA
VCE = 1 V, IC = 50 mA
BCW60A
BCW60B
BCW60C
BCW60D
BCW60A
BCW60B
BCW60C
BCW60D
BCW60A
BCW60B
BCW60C
BCW60D
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
20 140
20 200
40 300
100 460
–
–
–
–
120 170 220
180 250 310
250 350 460
380 500 630
50 –
70 –
90 –
100 –
–
–
–
–
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BCW60A ... BCW60D
Characteristics (Tj = 25°C)
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
VCEsat
VCEsat
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
VBEsat
VBEsat
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
IC = 50 mA, VCE = 1 V
VBE
VBE
VBE
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCE = 30 V, Tj = 125°C, (E open)
ICB0
ICB0
Emitter-Base cutoff current
VEB = 4 V, (C open)
IEB0
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 10 V, IC = ic = 0, f = 1 MHz
CEBO
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– 120 mV 250 mV
– 200 mV 550 mV
– 700 mV 850 mV
– 830 mV 1050 mV
–
550 mV
–
520 mV
650 mV
780 mV
–
750 mV
–
– – 20 nA
– – 20 µA
– – 20 nA
100 MHz 250 MHz
–
– 2 pF –
– 11 pF –
–
2 dB
6 dB
< 420 K/W 1)
BCW61A ... BCW61D
BCW60A = AA
BCW60B = AB
BCW60C = AC
BCW60D = AD
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
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